| Presentation | 2010-11-11 AlN growth on SiC by LP-HVPE Kenta OKUMURA, Takuya NOMURA, Hideto MIYAKE, Kazumasa HIRAMATSU, Osamu ERYUU, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlN films were grown on 6H-SiC. As the thickness of AlN layer increased, crack and peeling occurred, which was considered to be due to the difference in thermal expansion between the AlN layer and substrate. The patterned substrates are able to relax the stress incurred by AlN. Therefore AlN films were grown on patterned SiC with stripes along the <1-100> and <11-20> directions by hydride vapor phase epitaxy and characterized by scanning electron microscope, atomic force microscopy and high-resolution X-ray diffraction. Although the critical thickness of AlN can be increased significantly using both patterns, AlN grown on <1-100>-patterned SiC was more easily coalesced than that on the <11-20> pattern. Moreover, the surface morphology and crystal quality of samples grown on <1-100>-patterned SiC were better than those on <11-20>-patterned substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / 6H-SiC / trench-pattern / HVPE |
| Paper # | ED2010-146,CPM2010-112,LQE2010-102 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2010/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlN growth on SiC by LP-HVPE |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | 6H-SiC |
| Keyword(3) | trench-pattern |
| Keyword(4) | HVPE |
| 1st Author's Name | Kenta OKUMURA |
| 1st Author's Affiliation | Graduate school of Engineering, Mie University() |
| 2nd Author's Name | Takuya NOMURA |
| 2nd Author's Affiliation | Graduate school of Engineering, Mie University |
| 3rd Author's Name | Hideto MIYAKE |
| 3rd Author's Affiliation | Graduate school of Engineering, Mie University |
| 4th Author's Name | Kazumasa HIRAMATSU |
| 4th Author's Affiliation | Graduate school of Engineering, Mie University |
| 5th Author's Name | Osamu ERYUU |
| 5th Author's Affiliation | Nagoya Institute of Technology |
| Date | 2010-11-11 |
| Paper # | ED2010-146,CPM2010-112,LQE2010-102 |
| Volume (vol) | vol.110 |
| Number (no) | 273 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |