Presentation 2010-11-11
GaN growth on pseudo (111)Al substrates by RF-MBE
Tohru HONDA, Masato HAYASHI, Taiga GOTO, Tatsuhiro IGAKI,
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Abstract(in English) Fabrication of integrated light-emitting devices based on GaN requires a vertical carrier injection. In the case, GaN growth on metal substrates is one of the solutions. Epitaxial growth of (111)Al on (0001)sapphire was investigated for the application to pseudo Al substrates for the III-V growth. At the growth temperatures around 200℃, the Epitaxial growth was achieved. Its atomic force microscopy (AFM) images indicated that the surface morphology of the (111)Al layer was smooth compared with that of bulky (111)Al substrates with chemical polishing treatment. The surface nitridation was also investigated. At the temperature of 350℃, streaky RHEED patterns were observed. Those results clarified that the pseudo Al substrates grown by MBE was suitable for the substrates using the III-V growth.
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Keyword(in English) gallium nitride / GaN / Al substrate / MBE
Paper # ED2010-144,CPM2010-110,LQE2010-100
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Committee LQE
Conference Date 2010/11/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaN growth on pseudo (111)Al substrates by RF-MBE
Sub Title (in English)
Keyword(1) gallium nitride
Keyword(2) GaN
Keyword(3) Al substrate
Keyword(4) MBE
1st Author's Name Tohru HONDA
1st Author's Affiliation Graduate School of Engineering, Kogakuin University()
2nd Author's Name Masato HAYASHI
2nd Author's Affiliation Graduate School of Engineering, Kogakuin University
3rd Author's Name Taiga GOTO
3rd Author's Affiliation Graduate School of Engineering, Kogakuin University
4th Author's Name Tatsuhiro IGAKI
4th Author's Affiliation Graduate School of Engineering, Kogakuin University
Date 2010-11-11
Paper # ED2010-144,CPM2010-110,LQE2010-100
Volume (vol) vol.110
Number (no) 273
Page pp.pp.-
#Pages 4
Date of Issue