Presentation | 2010-11-12 Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tukuru Katsuyama, Takao Nakamura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas channels on low dislocation density free-standing GaN substrates have been developed. The VHFETs exhibit a specific on-resistance of 7.6 mΩcm^2 at a threshold voltage of -1.1 V and a breakdown voltage of 672 V. The breakdown voltage and the figure of merit are the highest among those of the GaN-based vertical transistors ever reported. It was also demonstrated that the threshold voltage can be controlled by the thickness of AlGaN layers and a normally-off operation is achieved. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN/GaN / heterojunction field-effect transistor / GaN substrate |
Paper # | ED2010-157,CPM2010-123,LQE2010-113 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2010/11/4(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates |
Sub Title (in English) | |
Keyword(1) | AlGaN/GaN |
Keyword(2) | heterojunction field-effect transistor |
Keyword(3) | GaN substrate |
1st Author's Name | Masaya Okada |
1st Author's Affiliation | Sumitomo Electric Industries, Ltd.() |
2nd Author's Name | Yu Saitoh |
2nd Author's Affiliation | Sumitomo Electric Industries, Ltd. |
3rd Author's Name | Mitsunori Yokoyama |
3rd Author's Affiliation | Sumitomo Electric Industries, Ltd. |
4th Author's Name | Ken Nakata |
4th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
5th Author's Name | Seiji Yaegassi |
5th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
6th Author's Name | Koji Katayama |
6th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
7th Author's Name | Masaki Ueno |
7th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
8th Author's Name | Makoto Kiyama |
8th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
9th Author's Name | Tukuru Katsuyama |
9th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
10th Author's Name | Takao Nakamura |
10th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
Date | 2010-11-12 |
Paper # | ED2010-157,CPM2010-123,LQE2010-113 |
Volume (vol) | vol.110 |
Number (no) | 272 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |