Presentation 2010-11-12
Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi YAGI, Shoko HIRATA, Yasunobu SUMIDA, Masahiro BESSHO, Hiroji KAWAI, Toshiharu MATSUEDA, Akira USUI,
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Abstract(in English) We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating characteristics. The breakdown voltage and the specific on-resistance (R_A) of the SBD without field plate structure on GaN free-standing substrate were 546 V and 2 mΩcm^2, respectively. SBDs on GaN free-standing substrate were hardly influenced by the current collapse.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / SBD / GaN free-standing substrate / Current collapse
Paper # ED2010-156,CPM2010-122,LQE2010-112
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Committee CPM
Conference Date 2010/11/4(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Vertical GaN Diode on GaN Free-Standing Substrate
Sub Title (in English)
Keyword(1) GaN
Keyword(2) SBD
Keyword(3) GaN free-standing substrate
Keyword(4) Current collapse
1st Author's Name Shuichi YAGI
1st Author's Affiliation POWDEC. K. K.()
2nd Author's Name Shoko HIRATA
2nd Author's Affiliation POWDEC. K. K.
3rd Author's Name Yasunobu SUMIDA
3rd Author's Affiliation POWDEC. K. K.
4th Author's Name Masahiro BESSHO
4th Author's Affiliation POWDEC. K. K.
5th Author's Name Hiroji KAWAI
5th Author's Affiliation POWDEC. K. K.
6th Author's Name Toshiharu MATSUEDA
6th Author's Affiliation Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd.
7th Author's Name Akira USUI
7th Author's Affiliation Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd.
Date 2010-11-12
Paper # ED2010-156,CPM2010-122,LQE2010-112
Volume (vol) vol.110
Number (no) 272
Page pp.pp.-
#Pages 4
Date of Issue