| Presentation | 2010-11-12 Characterization of insulated gates on GaN and AlGaN/GaN structures Yujin HORI, Naohisa HARADA, Chihoko MIZUE, Tamotsu HASHIZUME, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the interface and electrical properties of insulated gates fabricated on GaN and AlGaN/GaN structures using atomic layer deposited Al_2O_3 and electrochemical oxide films. The annealing process at 800℃ brought a large number of microcrystallization regions into the Al_2O_3 layer, causing a marked leakage in the current-voltage characteristics of the Al_2O_3/n-GaN structure. The "ohmic-first" process with a SiN protection layer suppressed leakage current and realized low electronic state densities at the Al_2O_3/n-GaN interface. The electrochemical oxidation process was applied to AlGaN/GaN HEMT structure. The formation of the recessed oxide gate structure realized a low gate leakage current and a normally-off operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / Al_2O_3 / MOS / normally-off |
| Paper # | ED2010-154,CPM2010-120,LQE2010-110 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2010/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of insulated gates on GaN and AlGaN/GaN structures |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | Al_2O_3 |
| Keyword(4) | MOS |
| Keyword(5) | normally-off |
| 1st Author's Name | Yujin HORI |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Naohisa HARADA |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Chihoko MIZUE |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University:JST-CREST |
| Date | 2010-11-12 |
| Paper # | ED2010-154,CPM2010-120,LQE2010-110 |
| Volume (vol) | vol.110 |
| Number (no) | 272 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |