| Presentation | 2010-11-11 High-Power GaN-HEMT for Millimeter-Wave Amplifier Kozo MAKIYAMA, Toshihiro OHKI, Naoya OKAMOTO, Masahito KANAMURA, Satoshi MASUDA, Yasuhiro NAKASHA, Kazukiyo JOSHIN, Kenji IMANISHI, Naoki HARA, Shiro OZAKI, Norikazu NAKAMURA, Toshihide KIKKAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | There are high expectations for a GaN high electron mobility transistor (GaN-HEMT) to serve as a key device in the production of a high power and high efficiency millimeter-wave amplifier. Until now, an extremely low three-terminal pinched-off-current of less than 10^<-6> A/mm was achieved by applying band engineering. It improved the on-state breakdown voltage to 50 V and the off-state breakdown voltage to over 100 V. However, the output power of a GaN-HEMT decreases due to current collapse. In particular, the influence of current collapse increases in a GaN-HEMT with a short gate-length. In this work, technology was developed to reduce this amount of current collapse. By utilizing thin silicon nitride passivation film that contained many Si-H bonds, current collapse was remarkably improved. A 3-stage common source amplifier MMIC was fabricated that used current collapse reducing technology. The P_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN-HEMT / Millimeter wave / Amplifier / Current collapse / Silicon nitride |
| Paper # | ED2010-153,CPM2010-119,LQE2010-109 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2010/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Power GaN-HEMT for Millimeter-Wave Amplifier |
| Sub Title (in English) | |
| Keyword(1) | GaN-HEMT |
| Keyword(2) | Millimeter wave |
| Keyword(3) | Amplifier |
| Keyword(4) | Current collapse |
| Keyword(5) | Silicon nitride |
| 1st Author's Name | Kozo MAKIYAMA |
| 1st Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Toshihiro OHKI |
| 2nd Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Naoya OKAMOTO |
| 3rd Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd. |
| 4th Author's Name | Masahito KANAMURA |
| 4th Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd. |
| 5th Author's Name | Satoshi MASUDA |
| 5th Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd. |
| 6th Author's Name | Yasuhiro NAKASHA |
| 6th Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd. |
| 7th Author's Name | Kazukiyo JOSHIN |
| 7th Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd. |
| 8th Author's Name | Kenji IMANISHI |
| 8th Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd. |
| 9th Author's Name | Naoki HARA |
| 9th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 10th Author's Name | Shiro OZAKI |
| 10th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 11th Author's Name | Norikazu NAKAMURA |
| 11th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 12th Author's Name | Toshihide KIKKAWA |
| 12th Author's Affiliation | Fujitsu Limited:Fujitsu Laboratories Ltd. |
| Date | 2010-11-11 |
| Paper # | ED2010-153,CPM2010-119,LQE2010-109 |
| Volume (vol) | vol.110 |
| Number (no) | 272 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |