Presentation	2010-11-11 Current control of AlGaN/GaN HEMT with multi-mesa nanochannels Kota OHI, Tamotsu HASHIZUME,
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Abstract(in English)	We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has parallel mesa-shaped channels with two-dimensional electron gas (2DEG) surrounded by the gate electrode. The MMC HEMT exhibited a steeper I_-V_ curve in linear region and a higher transconductance than the planar HEMT, in spite of the fact that the effective gate width of the MMC device is about half of that for the planar device. The MMC HEMT shows excellent current stability in saturation region. From the result of current collapse measurement, the influence of current collapse was weak for the MMC structure because the MMC structure is rather insensitive to change in the access resistance due to high impedance channel.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	GaN / AlGaN / High Electron Mobility Transistor (HEMT) / Multi-Mesa-Channel (MMC) structure
Paper #	ED2010-152,CPM2010-118,LQE2010-108
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Conference Information
Committee	CPM
Conference Date	2010/11/4(1days)
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Paper Information
Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Sub Title (in English)
Keyword(1)	GaN
Keyword(2)	AlGaN
Keyword(3)	High Electron Mobility Transistor (HEMT)
Keyword(4)	Multi-Mesa-Channel (MMC) structure
1st Author's Name	Kota OHI
1st Author's Affiliation	Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics, Hokkaido University()
2nd Author's Name	Tamotsu HASHIZUME
2nd Author's Affiliation	Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics, Hokkaido University:JST-CREST
Date	2010-11-11
Paper #	ED2010-152,CPM2010-118,LQE2010-108
Volume (vol)	vol.110
Number (no)	272
Page	pp.pp.-
#Pages	4
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