Presentation 2010-11-11
100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping
Takao OTO, Ryan G. BANAL, Ken KATAOKA, Mitsuru FUNATO, Yoichi KAWAKAMI,
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Abstract(in English) The external quantum efficiencies of AlGaN-based deep ultraviolet light emitting diodes are less than 5%, due to the causes such as low hole concentration in p-type AlGaN. To avoid problems associated with p-type AlGaN and to obtain the deep ultraviolet emission with high power and efficiency, high-quality Al-rich AlGaN/AlN quantum wells were pumped by an electron beam. An output of 100 mW and a power efficiency of 40% have been achieved at a wavelength of about 240 nm by optimizing both the electron beam condition and the quantum well structure.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) electron beam pumping / deep ultraviolet light source / AlGaN/AlN quantum well
Paper # ED2010-150,CPM2010-116,LQE2010-106
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Committee CPM
Conference Date 2010/11/4(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping
Sub Title (in English)
Keyword(1) electron beam pumping
Keyword(2) deep ultraviolet light source
Keyword(3) AlGaN/AlN quantum well
1st Author's Name Takao OTO
1st Author's Affiliation Dept. of Electronic Sci. and Eng., Kyoto University()
2nd Author's Name Ryan G. BANAL
2nd Author's Affiliation Dept. of Electronic Sci. and Eng., Kyoto University
3rd Author's Name Ken KATAOKA
3rd Author's Affiliation SSLS Development Dept., Ushio Inc.
4th Author's Name Mitsuru FUNATO
4th Author's Affiliation Dept. of Electronic Sci. and Eng., Kyoto University
5th Author's Name Yoichi KAWAKAMI
5th Author's Affiliation Dept. of Electronic Sci. and Eng., Kyoto University
Date 2010-11-11
Paper # ED2010-150,CPM2010-116,LQE2010-106
Volume (vol) vol.110
Number (no) 272
Page pp.pp.-
#Pages 4
Date of Issue