Presentation 2010-11-11
A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells
Atsushi A. YAMAGUCHI, Kazunobu KOJIMA,
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Abstract(in English) A new method to obtain material parameters inversely from measured polarization properties has been developed, and we analyzed actual experimental data previously reported from various research groups. From these analyses, it is predicted that negative polarization degree (favorable for LDs with cleaved facet cavity mirrors) will be enhanced in blue- or green-InGaN quantum wells on lower-angle (30-40° inclined from the c-plane) semipolar planes. Furthermore, it is also suggested that the polarized emission can appear even in higher-angle semipolar planes for InGaN quantum wells with high In composition.
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Keyword(in English) InGaN quantum well / nonpolar / semipolar / polarization / valence band / optical anisotropy / laser diode
Paper # ED2010-148,CPM2010-114,LQE2010-104
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Committee CPM
Conference Date 2010/11/4(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells
Sub Title (in English)
Keyword(1) InGaN quantum well
Keyword(2) nonpolar
Keyword(3) semipolar
Keyword(4) polarization
Keyword(5) valence band
Keyword(6) optical anisotropy
Keyword(7) laser diode
1st Author's Name Atsushi A. YAMAGUCHI
1st Author's Affiliation Kanazawa Institute of Technology()
2nd Author's Name Kazunobu KOJIMA
2nd Author's Affiliation Department of Electronics Science and Engineering, Kyoto University
Date 2010-11-11
Paper # ED2010-148,CPM2010-114,LQE2010-104
Volume (vol) vol.110
Number (no) 272
Page pp.pp.-
#Pages 4
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