| Presentation | 2010-11-11 Growth characteristics of GaNP layer and InAs-based QDs on Si substrate Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, Kosuke Nemoto, Tomoyuki Miyamoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this report, we investigate the basic property of the GaNP layer and the InAs-based quantum dots grown on Si substrate. In the GaNP layer growth on the Si substrate, two step growth method and strain GaInP buffer layer was introduced to suppress the 3D growth and decrease the surface roughness. Moreover, we investigated the the growth temperature dependency, the InAs supply dependency, and the nitrogen composition in the GaNP buffer layer dependency to clarify the InAs formation characteristic. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si / GaNP / InAs / Quantum dots / MOCVD |
| Paper # | ED2010-145,CPM2010-111,LQE2010-101 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2010/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth characteristics of GaNP layer and InAs-based QDs on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | GaNP |
| Keyword(3) | InAs |
| Keyword(4) | Quantum dots |
| Keyword(5) | MOCVD |
| 1st Author's Name | Satoru Tanabe |
| 1st Author's Affiliation | Tokyo Institute of Technology() |
| 2nd Author's Name | Rei Nishio |
| 2nd Author's Affiliation | Tokyo Institute of Technology |
| 3rd Author's Name | Yoshitaka Kobayashi |
| 3rd Author's Affiliation | Tokyo Institute of Technology |
| 4th Author's Name | Kosuke Nemoto |
| 4th Author's Affiliation | Tokyo Institute of Technology |
| 5th Author's Name | Tomoyuki Miyamoto |
| 5th Author's Affiliation | Tokyo Institute of Technology |
| Date | 2010-11-11 |
| Paper # | ED2010-145,CPM2010-111,LQE2010-101 |
| Volume (vol) | vol.110 |
| Number (no) | 272 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |