| Presentation | 2010-11-11 Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE Tsutomu ARAKI, Keisuke KAWASHIMA, Tomohiro YAMAGUCHI, Yasushi NANISHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we will report on the effects of nitridation and a low-temperature InN buffer layer on the growth of A-plane InN, and demonstrate successful improvements in crystal quality as well as surface morphology and electrical properties. A-plane InN films were grown on a nitridated r-plane sapphire by RF-MBE. The (11-20) XRC FWHM and surface morphology of the InN layers grown with 250℃-nitridation was improved with the decrease in the growth temperature of the buffer layer. We also confirmed that the semi-polar InN inclusion in the InN buffer layer was well suppressed by decreasing the nitridation temperature down to RT. The A-plane InN grown with the optimized InN buffer layer and substrate nitridation showed the improved XRC FWHM (33.1 arcmin.), flat surface morphology (rms 2.6 nm) and relatively low carrier concentration (4.7×10^<18>/cm^3) compared to the conventional A-plane InN without the LT-InN buffer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InN / non-polar / crystal growth / MBE / nitridation / buffer layer |
| Paper # | ED2010-143,CPM2010-109,LQE2010-99 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2010/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE |
| Sub Title (in English) | |
| Keyword(1) | InN |
| Keyword(2) | non-polar |
| Keyword(3) | crystal growth |
| Keyword(4) | MBE |
| Keyword(5) | nitridation |
| Keyword(6) | buffer layer |
| 1st Author's Name | Tsutomu ARAKI |
| 1st Author's Affiliation | Dept. of Photonics, Ritsumeikan University() |
| 2nd Author's Name | Keisuke KAWASHIMA |
| 2nd Author's Affiliation | Dept. of Photonics, Ritsumeikan University |
| 3rd Author's Name | Tomohiro YAMAGUCHI |
| 3rd Author's Affiliation | R-GIRO, Ritsumeikan University |
| 4th Author's Name | Yasushi NANISHI |
| 4th Author's Affiliation | Dept. of Photonics, Ritsumeikan University:WCU Program, Seoul National University |
| Date | 2010-11-11 |
| Paper # | ED2010-143,CPM2010-109,LQE2010-99 |
| Volume (vol) | vol.110 |
| Number (no) | 272 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |