Presentation 2010-10-28
Cryogenic readout electronics for space borne far-infrared image sensors(Satellite Systems,ICSANE 2010 (International Conference on Space, Aeronautical and Navigational Electronics))
Hirohisa Nagata, Takehiko Wada, Hirokazu Ikeda, Yasuo Arai, Morifumi Ohno,
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Abstract(in English) We have been developing low power cryogenic readout electronics for space borne large format far-infrared image sensors. As the circuit elements, a fully-depleted-silicon-on-insulator (FD-SOI) CMOS process was selected because they keep good static performance even at 4.2 K where many bulk-CMOS transistors suffer from anomalous behaviors. We have designed and fabricated several test circuits with the FD-SOI CMOS process and confirmed that a operational amplifier successfully operates with open loop gain to be over 1000 and with power consumption to be around 1.3μW as designed. In our presentation, we will make a report on some measurement results of the test circuits.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Far-infrared Astronomy / Cryogenic readout electronics / charge amplifier / VLSI / FD-SOI-CMOS
Paper # SANE2010-108
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Conference Information
Committee SANE
Conference Date 2010/10/20(1days)
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Registration To Space, Aeronautical and Navigational Electronics (SANE)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Cryogenic readout electronics for space borne far-infrared image sensors(Satellite Systems,ICSANE 2010 (International Conference on Space, Aeronautical and Navigational Electronics))
Sub Title (in English)
Keyword(1) Far-infrared Astronomy
Keyword(2) Cryogenic readout electronics
Keyword(3) charge amplifier
Keyword(4) VLSI
Keyword(5) FD-SOI-CMOS
1st Author's Name Hirohisa Nagata
1st Author's Affiliation Institute of Space and Astronautical Science Japan Aerospace Exploration Agency()
2nd Author's Name Takehiko Wada
2nd Author's Affiliation Institute of Space and Astronautical Science Japan Aerospace Exploration Agency
3rd Author's Name Hirokazu Ikeda
3rd Author's Affiliation Institute of Space and Astronautical Science Japan Aerospace Exploration Agency
4th Author's Name Yasuo Arai
4th Author's Affiliation High Energy Accelerator Research Organization
5th Author's Name Morifumi Ohno
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology
Date 2010-10-28
Paper # SANE2010-108
Volume (vol) vol.110
Number (no) 250
Page pp.pp.-
#Pages 6
Date of Issue