| Presentation | 2010-10-25 Field emission mechanism of n-type semiconducting diamond with negative electron affinity Takatoshi YAMADA, Masataka HASEGAWA, Christoph E. NEBEL, Yuki KUDO, Hisato YAMAGUCHI, Tomoaki MASUZAWA, Ken OKANO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to utilize negative electron affinities (NEA) on diamond surfaces, field emission from n-type diamond with NEA was investigated. It was confirmed, by ultraviolet photoelectron spectroscopy (UPS), that hydrogen-plasma treated n-type diamond surface has NEA. Field electron emission properties as a function of anode-diamond distances were measured and a potential drop in vacuum was evaluated. It was found that electric fields of over few 10V/μm were required to emit electrons from n-type diamond NEA surface. It was considered that such higher electric fields were necessary to reduce an internal barrier at NEA surface. From the field emission results, the internal barrier height was estimated to be about 3.3eV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | n-type diamond / negative electron affinity / band bending / field emission |
| Paper # | ED2010-131 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2010/10/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Field emission mechanism of n-type semiconducting diamond with negative electron affinity |
| Sub Title (in English) | |
| Keyword(1) | n-type diamond |
| Keyword(2) | negative electron affinity |
| Keyword(3) | band bending |
| Keyword(4) | field emission |
| 1st Author's Name | Takatoshi YAMADA |
| 1st Author's Affiliation | NanoTube Research Center, National Institute of Advanced Industrial Science and Technology (AIST)() |
| 2nd Author's Name | Masataka HASEGAWA |
| 2nd Author's Affiliation | NanoTube Research Center, National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Christoph E. NEBEL |
| 3rd Author's Affiliation | Fraunhofer Institute for Applied Solid State Physics |
| 4th Author's Name | Yuki KUDO |
| 4th Author's Affiliation | Dept. of Material Science, International Christian University (ICU) |
| 5th Author's Name | Hisato YAMAGUCHI |
| 5th Author's Affiliation | Dept. of Material Science, International Christian University (ICU):(Present office)Dept. of Material Science and Engineering, Rutgers University |
| 6th Author's Name | Tomoaki MASUZAWA |
| 6th Author's Affiliation | Dept. of Material Science, International Christian University (ICU) |
| 7th Author's Name | Ken OKANO |
| 7th Author's Affiliation | Dept. of Material Science, International Christian University (ICU) |
| Date | 2010-10-25 |
| Paper # | ED2010-131 |
| Volume (vol) | vol.110 |
| Number (no) | 249 |
| Page | pp.pp.- |
| #Pages | 5 |
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