Presentation 2010-10-25
Field Emission Properties of Nitrogen-doped Diamond Related with C-N Bond
Yuki KUDO, Tomoaki MASUZAWA, Yusuke SATO, Ichitaro SAITO, Takatoshi YAMADA, Angel T. T. KOH, Daniel H. C. CHUA, Teruo YOSHINO, Wang J. CHUN, Satoshi YAMASAKI, Ken OKANO,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Electron field emission measurement and Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) were carried out on nitrogen (N-) doped diamond films of two different impurity sources; urea and dimethylurea. Urea doped diamond films exhibited the strongest signal intensity of C-N bonds according to the TOF-SIMS results. As for the field emission properties, the enhancement factor β was characterised not only by Fowler-Nordheim (F-N) plot, but also by V-d plot where the voltage required for a certain value of emission current to flow was plotted against each anode-cathode distance. The largest β was acquired from the diamond film with the most C-N counts, and therefore more C-N maybe the key to enhancing electron field emission from N-doped diamond.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) nitrogen-doped diamond / dimethylurea / urea / field emission / enhancement factor β / TOF-SIMS
Paper # ED2010-130
Date of Issue

Conference Information
Committee ED
Conference Date 2010/10/18(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Field Emission Properties of Nitrogen-doped Diamond Related with C-N Bond
Sub Title (in English)
Keyword(1) nitrogen-doped diamond
Keyword(2) dimethylurea
Keyword(3) urea
Keyword(4) field emission
Keyword(5) enhancement factor β
Keyword(6) TOF-SIMS
1st Author's Name Yuki KUDO
1st Author's Affiliation Graduate School of Pure and Applied Sciences, University of Tsukuba:Department of Materials Science, International Christian University()
2nd Author's Name Tomoaki MASUZAWA
2nd Author's Affiliation Department of Materials Science, International Christian University
3rd Author's Name Yusuke SATO
3rd Author's Affiliation Department of Materials Science, International Christian University
4th Author's Name Ichitaro SAITO
4th Author's Affiliation Department of Materials Science, International Christian University:Department of Engineering, University of Cambridge
5th Author's Name Takatoshi YAMADA
5th Author's Affiliation Nanotube Research Center, National Institute of Advanced Industrial Science and Technology
6th Author's Name Angel T. T. KOH
6th Author's Affiliation Department of Materials Science and Engineering, National University of Singapore
7th Author's Name Daniel H. C. CHUA
7th Author's Affiliation Department of Materials Science and Engineering, National University of Singapore
8th Author's Name Teruo YOSHINO
8th Author's Affiliation Department of Materials Science, International Christian University
9th Author's Name Wang J. CHUN
9th Author's Affiliation Department of Materials Science, International Christian University
10th Author's Name Satoshi YAMASAKI
10th Author's Affiliation Graduate School of Pure and Applied Sciences, University of Tsukuba:Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology
11th Author's Name Ken OKANO
11th Author's Affiliation Department of Materials Science, International Christian University
Date 2010-10-25
Paper # ED2010-130
Volume (vol) vol.110
Number (no) 249
Page pp.pp.-
#Pages 5
Date of Issue