| Presentation | 2010-10-25 FEA fabrication using thin film bending technology Tomoya YOSHIDA, Masayoshi NAGAO, Takashi NISHI, Hisashi OHSAKI, Takashi SHIMIZU, Seigo KANEMARU, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A simple field emitter array (FEA) fabrication process based on ion-induced bending (IIB) technology was developed. Using IIB technology, only 20-nm-thick thin film is necessary to form an emitter tip of 1 micrometer in height. This FEA fabrication process does not require any specialized equipments, and the condition of the ion irradiation for IIB is equal to the ion doping process of the general thin-film transistor (TFT) fabrication. And we demonstrated the fabrication of the FEA integration with TFT. The FEA fabrication process using the IIB technology would therefore be compatible with standard TFT fabrication processes and could produce large-area FEA applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ion beam irradiation / thin film / stress relaxation / Large-area FEA / FED / X-ray imaging device |
| Paper # | ED2010-128 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2010/10/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | FEA fabrication using thin film bending technology |
| Sub Title (in English) | |
| Keyword(1) | ion beam irradiation |
| Keyword(2) | thin film |
| Keyword(3) | stress relaxation |
| Keyword(4) | Large-area FEA |
| Keyword(5) | FED |
| Keyword(6) | X-ray imaging device |
| 1st Author's Name | Tomoya YOSHIDA |
| 1st Author's Affiliation | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)() |
| 2nd Author's Name | Masayoshi NAGAO |
| 2nd Author's Affiliation | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Takashi NISHI |
| 3rd Author's Affiliation | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Hisashi OHSAKI |
| 4th Author's Affiliation | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Takashi SHIMIZU |
| 5th Author's Affiliation | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Seigo KANEMARU |
| 6th Author's Affiliation | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) |
| Date | 2010-10-25 |
| Paper # | ED2010-128 |
| Volume (vol) | vol.110 |
| Number (no) | 249 |
| Page | pp.pp.- |
| #Pages | 6 |
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