Presentation 2010-10-19
Electric Characteristics of NbN Tunnel Junctions with Plasuma-Nitrided AlNx Barriers
Naoto NAITO, Tatsunori FUNAI, Chikaze MARUYAMA, Hiroyuki AKAIKE, Akira FUJIMAKI,
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Abstract(in English) We present the preparation process of plasma-nitrided AlNx barriers for NbN tunnel junctions and the electrical characteristics of the junctions. Our aim is to apply the junctions to electromagnetic wave detectors (SIS mixer, direct detector). To fabricate high-quality junctions suitable for the detectors, it is important to clarify physical mechanism for AlNx barrier formation. In this work, we have fabricated the NbN tunnel junctions using two different methods of plasma-nitridation and compared the electrical characteristics of the junctions. In the case of Radical-nitridation, junctions showed current-voltage characteristics with low leakage currents. The critical current density J_c and quality parameter R_/R_n were obtained up to 7kA/cm^2 and 42.8, respectively. In the case of Rf-bias nitridation, junctions showed current-voltage characteristics with high leakage currents. J_c and R_/R_n were up to 32kA/cm^2 and 11, respectively.
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Keyword(in English) Plasma-Nitridation / AlNx / NbN tunnel junction
Paper # SCE2010-26
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Committee SCE
Conference Date 2010/10/12(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electric Characteristics of NbN Tunnel Junctions with Plasuma-Nitrided AlNx Barriers
Sub Title (in English)
Keyword(1) Plasma-Nitridation
Keyword(2) AlNx
Keyword(3) NbN tunnel junction
1st Author's Name Naoto NAITO
1st Author's Affiliation Department of Quantum Engineering, Nagoya University()
2nd Author's Name Tatsunori FUNAI
2nd Author's Affiliation Department of Quantum Engineering, Nagoya University
3rd Author's Name Chikaze MARUYAMA
3rd Author's Affiliation Department of Quantum Engineering, Nagoya University
4th Author's Name Hiroyuki AKAIKE
4th Author's Affiliation Department of Quantum Engineering, Nagoya University
5th Author's Name Akira FUJIMAKI
5th Author's Affiliation Department of Quantum Engineering, Nagoya University
Date 2010-10-19
Paper # SCE2010-26
Volume (vol) vol.110
Number (no) 235
Page pp.pp.-
#Pages 6
Date of Issue