Presentation 2010-08-27
Improved performances of 1.3-μm InAs/GaAs high-density quantum dot Lasers
Yu TANAKA, Kan TAKADA, Mitsuru ISHIDA, Takeshi MATSUMOTO, Hai-Zhi SONG, Mitsuru EKAWA, Yoshiaki NAKATA, Tsuyoshi YAMAMOTO, Masaomi YAMAGUCHI, Kenichi NISHI, Mitsuru SUGAWARA, Yasuhiko ARAKAWA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We report on a recent progress in 1.3 μm InAs/GaAs high-density quantum dot lasers. By stacking high-density quantum dot layer where areal density is 5.9×10^<10>cm^<-2> by molecular beam epitaxy we have successfully increased the optical modal gain beyond 40 cm^<-1>. The fabricated Fabry Perot laser showed an extended modulation bandwidth to 11 GHz, and 25 Gb/s eye-diagram which was the first demonstration in quantum dot lasers, to the best of our knowledge. We also fabricated distributed feedback lasers with eight-layer-stacked high-density quantum dot as an active layer, in which InGaP/GaAs gratings were formed just above the active layer. Excellent single mode lasing and temperature stable 10.3 Gb/s modulation characteristics have been achieved in the temperature range between -40℃ and 80℃.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) High-Density Quantum Dot / Quantum Dot Laser / High Speed Modulation / DFB Laser / Temperature Stability
Paper # EMD2010-60,CPM2010-76,OPE2010-85,LQE2010-58
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Conference Information
Committee EMD
Conference Date 2010/8/19(1days)
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Paper Information
Registration To Electromechanical Devices (EMD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improved performances of 1.3-μm InAs/GaAs high-density quantum dot Lasers
Sub Title (in English)
Keyword(1) High-Density Quantum Dot
Keyword(2) Quantum Dot Laser
Keyword(3) High Speed Modulation
Keyword(4) DFB Laser
Keyword(5) Temperature Stability
1st Author's Name Yu TANAKA
1st Author's Affiliation Fujitsu Laboratories Ltd.:Fujitsu Ltd.:QD Laser Inc.:Photonics Electronics Technology Research Association (PETRA)()
2nd Author's Name Kan TAKADA
2nd Author's Affiliation NanoQuine, University of Tokyo
3rd Author's Name Mitsuru ISHIDA
3rd Author's Affiliation NanoQuine, University of Tokyo
4th Author's Name Takeshi MATSUMOTO
4th Author's Affiliation Fujitsu Laboratories Ltd.
5th Author's Name Hai-Zhi SONG
5th Author's Affiliation Fujitsu Laboratories Ltd.
6th Author's Name Mitsuru EKAWA
6th Author's Affiliation Fujitsu Laboratories Ltd.
7th Author's Name Yoshiaki NAKATA
7th Author's Affiliation Fujitsu Laboratories Ltd.:QD Laser Inc.
8th Author's Name Tsuyoshi YAMAMOTO
8th Author's Affiliation Fujitsu Laboratories Ltd.:Fujitsu Ltd.:Photonics Electronics Technology Research Association (PETRA)
9th Author's Name Masaomi YAMAGUCHI
9th Author's Affiliation QD Laser Inc.
10th Author's Name Kenichi NISHI
10th Author's Affiliation QD Laser Inc.
11th Author's Name Mitsuru SUGAWARA
11th Author's Affiliation QD Laser Inc.
12th Author's Name Yasuhiko ARAKAWA
12th Author's Affiliation NanoQuine, University of Tokyo:IIS, University of Tokyo:RCAST, University of Tokyo
Date 2010-08-27
Paper # EMD2010-60,CPM2010-76,OPE2010-85,LQE2010-58
Volume (vol) vol.110
Number (no) 178
Page pp.pp.-
#Pages 6
Date of Issue