Presentation | 2010-08-27 Switching Demonstration of an Optical Gate Switch Using a Phase-Change Material Integrated with Si Waveguides Daiki TANAKA, Yuichiro IKUMA, Yuya SHOJI, Masashi KUWAHARA, Xiaomin WANG, Kenji KINTAKA, Hitoshi KAWASHIMA, Tatsuya TOYOSAKI, Hiroyuki TSUDA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Two types of optical gate switch using phase-change material (PCM) were fabricated. The one switch had a 1-μm-thick PCM (Ge_2Sb_2Te_5) layer and the other one had a 20-nm-thick PCM layer. We successfully demonstrated switching by laser pulse irradiation for the first time. As for the switch with a 1-μm-thick PCM layer, 'ON' to 'OFF' switching with an extinction ratio of more than 12.5 dB in the wavelength range from 1525 nm to 1600 nm was observed. The switch with a 20-nm-thick PCM layer was operated two cycles, 'ON' to 'OFF' to 'ON'. The changes of output power were 14.3 dB ('ON' to 'OFF' 1st), 7.7 dB ('OFF' to 'ON' 1st), 7.4 dB ('ON' to 'OFF' 2nd), and 4.4 dB ('OFF' to 'ON' 2nd), respectively. We used a laser pulse with a width of 453 ns and a peak power of 63 mW for crystallization and with a width of 10 ns and a peak power of 150 mW for amorphization. The wavelength of laser pulses was 660 nm. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Phase-change material / Si wire waveguide / Optical switch |
Paper # | EMD2010-53,CPM2010-69,OPE2010-78,LQE2010-51 |
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Conference Information | |
Committee | EMD |
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Conference Date | 2010/8/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electromechanical Devices (EMD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Switching Demonstration of an Optical Gate Switch Using a Phase-Change Material Integrated with Si Waveguides |
Sub Title (in English) | |
Keyword(1) | Phase-change material |
Keyword(2) | Si wire waveguide |
Keyword(3) | Optical switch |
1st Author's Name | Daiki TANAKA |
1st Author's Affiliation | Graduate School of Science and Technology, Keio University() |
2nd Author's Name | Yuichiro IKUMA |
2nd Author's Affiliation | Graduate School of Science and Technology, Keio University |
3rd Author's Name | Yuya SHOJI |
3rd Author's Affiliation | Network Photonics Research Center, AIST |
4th Author's Name | Masashi KUWAHARA |
4th Author's Affiliation | Photonics Research Institute, AIST |
5th Author's Name | Xiaomin WANG |
5th Author's Affiliation | Photonics Research Institute, AIST |
6th Author's Name | Kenji KINTAKA |
6th Author's Affiliation | Network Photonics Research Center, AIST |
7th Author's Name | Hitoshi KAWASHIMA |
7th Author's Affiliation | Network Photonics Research Center, AIST |
8th Author's Name | Tatsuya TOYOSAKI |
8th Author's Affiliation | Graduate School of Science and Technology, Keio University |
9th Author's Name | Hiroyuki TSUDA |
9th Author's Affiliation | Graduate School of Science and Technology, Keio University |
Date | 2010-08-27 |
Paper # | EMD2010-53,CPM2010-69,OPE2010-78,LQE2010-51 |
Volume (vol) | vol.110 |
Number (no) | 178 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |