Presentation | 2010/8/19 A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD Kousuke MIYAJI, Shinji NODA, Teruyoshi HATANAKA, Mitsue TAKAHASHI, Shigeki SAKAI, Ken TAKEUCHI, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A Single-Cell-Self-Boost (SCSB) program scheme is proposed to achieve a 1.0V power supply operation in Ferroelectric (Fe-) NAND flash memories. In the proposed SCSB scheme, only the channel voltage of the cell to which the program voltage V_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | NAND flash memory / Ferroelectric / Fe-NAND / Fe-FET / Disturb / Single-Cell Self-Boost(Single-Cell Self-Boost:SCSB) / SSD / Low power / High performance programming |
Paper # | ICD2010-54,SDM2010-139 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2010/8/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD |
Sub Title (in English) | |
Keyword(1) | NAND flash memory |
Keyword(2) | Ferroelectric |
Keyword(3) | Fe-NAND |
Keyword(4) | Fe-FET |
Keyword(5) | Disturb |
Keyword(6) | Single-Cell Self-Boost(Single-Cell Self-Boost:SCSB) |
Keyword(7) | SSD |
Keyword(8) | Low power |
Keyword(9) | High performance programming |
1st Author's Name | Kousuke MIYAJI |
1st Author's Affiliation | Faculty of Engineering, University of Tokyo() |
2nd Author's Name | Shinji NODA |
2nd Author's Affiliation | Faculty of Engineering, University of Tokyo |
3rd Author's Name | Teruyoshi HATANAKA |
3rd Author's Affiliation | Faculty of Engineering, University of Tokyo |
4th Author's Name | Mitsue TAKAHASHI |
4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology |
5th Author's Name | Shigeki SAKAI |
5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology |
6th Author's Name | Ken TAKEUCHI |
6th Author's Affiliation | Faculty of Engineering, University of Tokyo |
Date | 2010/8/19 |
Paper # | ICD2010-54,SDM2010-139 |
Volume (vol) | vol.110 |
Number (no) | 183 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |