Presentation 2010/8/19
A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
Kousuke MIYAJI, Shinji NODA, Teruyoshi HATANAKA, Mitsue TAKAHASHI, Shigeki SAKAI, Ken TAKEUCHI,
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Abstract(in English) A Single-Cell-Self-Boost (SCSB) program scheme is proposed to achieve a 1.0V power supply operation in Ferroelectric (Fe-) NAND flash memories. In the proposed SCSB scheme, only the channel voltage of the cell to which the program voltage V_ is applied is self-boosted in the program-inhibit NAND string. The proposed program scheme shows an excellent tolerance to the program disturb at the power supply voltage, V_=1.0V. The power consumption of the Fe-NAND at V_=1.0V decreases by 86% compared with the conventional floating gate (FG-) NAND at V_=1.8V without degrading the write speed. The number of NAND chips written simultaneously in Solid-State Drives (SSD) increases by 6.9 times. As a result, the 9.5GByte/sec write throughput of the Fe-NAND SSD is achieved for an enterprise application.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NAND flash memory / Ferroelectric / Fe-NAND / Fe-FET / Disturb / Single-Cell Self-Boost(Single-Cell Self-Boost:SCSB) / SSD / Low power / High performance programming
Paper # ICD2010-54,SDM2010-139
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Conference Date 2010/8/19(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
Sub Title (in English)
Keyword(1) NAND flash memory
Keyword(2) Ferroelectric
Keyword(3) Fe-NAND
Keyword(4) Fe-FET
Keyword(5) Disturb
Keyword(6) Single-Cell Self-Boost(Single-Cell Self-Boost:SCSB)
Keyword(7) SSD
Keyword(8) Low power
Keyword(9) High performance programming
1st Author's Name Kousuke MIYAJI
1st Author's Affiliation Faculty of Engineering, University of Tokyo()
2nd Author's Name Shinji NODA
2nd Author's Affiliation Faculty of Engineering, University of Tokyo
3rd Author's Name Teruyoshi HATANAKA
3rd Author's Affiliation Faculty of Engineering, University of Tokyo
4th Author's Name Mitsue TAKAHASHI
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology
5th Author's Name Shigeki SAKAI
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology
6th Author's Name Ken TAKEUCHI
6th Author's Affiliation Faculty of Engineering, University of Tokyo
Date 2010/8/19
Paper # ICD2010-54,SDM2010-139
Volume (vol) vol.110
Number (no) 183
Page pp.pp.-
#Pages 6
Date of Issue