Presentation | 2010/8/19 1-Tbyte/s 1-Gbit 3-D DRAM Architecture for High Throughput Computing Yoshimitsu YANAGAWA, Kazuo ONO, Akira KOTABE, Tomonori SEKIGUCHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A novel DRAM architecture with an ultra high bandwidth is proposed for high throughput computing. The proposed architecture employs three techniques; 1)5-stage pipelined 16-DRAM cores, 2)an early bar write scheme for an 8-ns cycle-array operation, 3)16-Gbit/s I/O circuit on each 32 through-silicon-via pairs/DRAM core. We confirmed by the circuit simulation assuming 45-nm 1-Gbit chip that the proposed architecture achieves 1-Tbyte/s bandwidth with 19.5-W power consumption. The chip area is estimated to be 52mm^2. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | DRAM / 3-D interconnect / through silicon via / throughput computing |
Paper # | ICD2010-46,SDM2010-131 |
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Committee | ICD |
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Conference Date | 2010/8/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | 1-Tbyte/s 1-Gbit 3-D DRAM Architecture for High Throughput Computing |
Sub Title (in English) | |
Keyword(1) | DRAM |
Keyword(2) | 3-D interconnect |
Keyword(3) | through silicon via |
Keyword(4) | throughput computing |
1st Author's Name | Yoshimitsu YANAGAWA |
1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
2nd Author's Name | Kazuo ONO |
2nd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
3rd Author's Name | Akira KOTABE |
3rd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
4th Author's Name | Tomonori SEKIGUCHI |
4th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
Date | 2010/8/19 |
Paper # | ICD2010-46,SDM2010-131 |
Volume (vol) | vol.110 |
Number (no) | 183 |
Page | pp.pp.- |
#Pages | 6 |
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