Presentation 2010/8/19
1-Tbyte/s 1-Gbit 3-D DRAM Architecture for High Throughput Computing
Yoshimitsu YANAGAWA, Kazuo ONO, Akira KOTABE, Tomonori SEKIGUCHI,
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Abstract(in English) A novel DRAM architecture with an ultra high bandwidth is proposed for high throughput computing. The proposed architecture employs three techniques; 1)5-stage pipelined 16-DRAM cores, 2)an early bar write scheme for an 8-ns cycle-array operation, 3)16-Gbit/s I/O circuit on each 32 through-silicon-via pairs/DRAM core. We confirmed by the circuit simulation assuming 45-nm 1-Gbit chip that the proposed architecture achieves 1-Tbyte/s bandwidth with 19.5-W power consumption. The chip area is estimated to be 52mm^2.
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Keyword(in English) DRAM / 3-D interconnect / through silicon via / throughput computing
Paper # ICD2010-46,SDM2010-131
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Conference Date 2010/8/19(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) 1-Tbyte/s 1-Gbit 3-D DRAM Architecture for High Throughput Computing
Sub Title (in English)
Keyword(1) DRAM
Keyword(2) 3-D interconnect
Keyword(3) through silicon via
Keyword(4) throughput computing
1st Author's Name Yoshimitsu YANAGAWA
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name Kazuo ONO
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
3rd Author's Name Akira KOTABE
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
4th Author's Name Tomonori SEKIGUCHI
4th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
Date 2010/8/19
Paper # ICD2010-46,SDM2010-131
Volume (vol) vol.110
Number (no) 183
Page pp.pp.-
#Pages 6
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