Presentation 2010-07-30
Evaluation of Bending Characteristics in Silicon Wires Using Three-Dimensional Frequency-Domain Vectorial Finite Element Method
Satoshi KAISE, Yuki KAWAGUCHI, Kunimasa SAITOH, Masanori KOSHIBA,
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Abstract(in English) Silicon wires can achieve a strong optical confinement according to the high refractive index difference between the core and cladding material. Therefore, it is expected that they can reduce the size of optical circuits based on conventional silica waveguides. In general, optical circuits are composed of numbers of bent waveguides connected with straight waveguides. In order to evaluate propagation characteristics of such waveguides, we have to consider mismatch of the mode field between bent waveguides and straight waveguides. In this work, we evaluate bending characteristics of silicon wires with a newly developed three-dimensional vectorial finite element method.
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Keyword(in English) Silicon wires / Finite Element Method / Bending loss
Paper # MW2010-62,OPE2010-47
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Committee MW
Conference Date 2010/7/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Evaluation of Bending Characteristics in Silicon Wires Using Three-Dimensional Frequency-Domain Vectorial Finite Element Method
Sub Title (in English)
Keyword(1) Silicon wires
Keyword(2) Finite Element Method
Keyword(3) Bending loss
1st Author's Name Satoshi KAISE
1st Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University()
2nd Author's Name Yuki KAWAGUCHI
2nd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
3rd Author's Name Kunimasa SAITOH
3rd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
4th Author's Name Masanori KOSHIBA
4th Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
Date 2010-07-30
Paper # MW2010-62,OPE2010-47
Volume (vol) vol.110
Number (no) 155
Page pp.pp.-
#Pages 6
Date of Issue