Presentation 2010-07-30
Gain and Bandwidth Tunable Multi-band Differential Amplifiers
Yasushi ITOH, Kazuyoshi SAKAMOTO, Wei CAO, Keita SAKURAI, Toshihiko MURATA,
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Abstract(in English) An L-band gain and bandwidth tunable low-noise differential amplifier has been developed for the next generation reconfigurable wireless radios. It employs a varactor-tuned base bias circuit for tuning a lower band-edge frequency of the amplifier, a varactor-tuned collector bias circuit for tuning a higher band-edge frequency of the amplifier, an active load for a fine tuning of gain, and a cascode HBT for a coarse tuning of gain. With the use of the varactor-tuned bias circuits, the lower band-edge frequency can be varied from 0.3 to 0.8 GHz for a fixed higher band-edge frequency of 1.7 GHz. On the other hand, the higher band-edge frequency can be varied from 0.7 to 1.7 GHz for a fixed lower band-edge frequency of 0.3 GHz. With the use of an active load and a cascode HBT, a fine tuning range of gain up to 2.8 dB over 1.3 to 1.5 GHz and a coarse tuning range of gain up to 23 dB across 0.7 to 1.5 GHz have been successflully achieved. Since the frequency response including lower and higher band-edge frequencies as well as gain level can be tuned independently, the amplifier is considered to greatly contribute to realizing the next generation reconfigurable wireless transceivers.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) microwaves / differential amplifier / tunable gain / tunable bandwidth / SiGe HBT / active load / cascode BJT
Paper # MW2010-60,OPE2010-45
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Conference Information
Committee MW
Conference Date 2010/7/22(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Gain and Bandwidth Tunable Multi-band Differential Amplifiers
Sub Title (in English)
Keyword(1) microwaves
Keyword(2) differential amplifier
Keyword(3) tunable gain
Keyword(4) tunable bandwidth
Keyword(5) SiGe HBT
Keyword(6) active load
Keyword(7) cascode BJT
1st Author's Name Yasushi ITOH
1st Author's Affiliation Electrical and Information Engineering, Graduate School, Shonan Institute of Technology()
2nd Author's Name Kazuyoshi SAKAMOTO
2nd Author's Affiliation Electrical and Information Engineering, Graduate School, Shonan Institute of Technology
3rd Author's Name Wei CAO
3rd Author's Affiliation Electrical and Information Engineering, Graduate School, Shonan Institute of Technology
4th Author's Name Keita SAKURAI
4th Author's Affiliation Electrical and Information Engineering, Graduate School, Shonan Institute of Technology
5th Author's Name Toshihiko MURATA
5th Author's Affiliation Electrical and Information Engineering, Graduate School, Shonan Institute of Technology
Date 2010-07-30
Paper # MW2010-60,OPE2010-45
Volume (vol) vol.110
Number (no) 155
Page pp.pp.-
#Pages 5
Date of Issue