Presentation 2010-08-26
Theoretical Analysis of Property Improvement of InGaAs/InAlAs Five-layer Asymmetric Coupled Quantum Well for phase modulator by Strain Application
Takaki WAJIMA, Taro ARAKAWA, Kunio TADA,
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Abstract(in English) An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) theoretically shows giant refractive index change over wide wavelength region at low applied voltage and is promising for high performance optical devices based on phase shift. By introducing strain to the FACQW, valence band dispersions are modified and it improves the FACQW's electrorefractive index changes. For instance, V_π・L (product of applying voltage and modulation length) decreases by half. The proposed strained FACQW is very promising for high-performance optical modulators and switches.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum Well / Five-layer Asymmetric Coupled Quantum Well / Optical Modulator / Optical Switch / Electrorefractive Effect
Paper # EMD2010-41,CPM2010-57,OPE2010-66,LQE2010-39
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Committee CPM
Conference Date 2010/8/19(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Theoretical Analysis of Property Improvement of InGaAs/InAlAs Five-layer Asymmetric Coupled Quantum Well for phase modulator by Strain Application
Sub Title (in English)
Keyword(1) Quantum Well
Keyword(2) Five-layer Asymmetric Coupled Quantum Well
Keyword(3) Optical Modulator
Keyword(4) Optical Switch
Keyword(5) Electrorefractive Effect
1st Author's Name Takaki WAJIMA
1st Author's Affiliation Graduate School of Eng., Yokohama National Univ.()
2nd Author's Name Taro ARAKAWA
2nd Author's Affiliation Graduate School of Eng., Yokohama National Univ.
3rd Author's Name Kunio TADA
3rd Author's Affiliation Graduate School of Eng., Kanazawa Institute of Technology
Date 2010-08-26
Paper # EMD2010-41,CPM2010-57,OPE2010-66,LQE2010-39
Volume (vol) vol.110
Number (no) 179
Page pp.pp.-
#Pages 4
Date of Issue