| Presentation | 2010-01-29 Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers Takahiro KITADA, Tomoya TAKAHASHI, Ken MORITA, Toshiro ISU, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A GaAs/AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In_<0.35>Ga_<0.65>As barriers was grown by molecular beam epitaxy to yield planar-type optical Kerr gate switches. Time-resolved optical measurements at the cavity mode (λ=1.46μm) were performed by a pump-probe method at room temperature. Although only two layers of the InAs QDs were inserted into the λ/2 cavity layer, a large transmission change caused by the absorption saturation in the resonant QDs was clearly observed. The temporal profile was dominated by a fast (～16 ps) decay component resulting from carrier relaxation into the nonradiative centers due to the lattice strain relaxation. The optical Kerr signal from the QD-cavity sample was 60 times larger than that of a GaAs λ/2 cavity sample having no QDs. The ultrafast response time (< 1 ps) of the optical Kerr signal was found to be determined by the photon lifetime in the multilayer cavity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | All optical switch / Optical microcavity / Optical Kerr effect / III-V semiconductors / Quantum dots |
| Paper # | PN2009-51,OPE2009-189,LQE2009-171 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2010/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers |
| Sub Title (in English) | |
| Keyword(1) | All optical switch |
| Keyword(2) | Optical microcavity |
| Keyword(3) | Optical Kerr effect |
| Keyword(4) | III-V semiconductors |
| Keyword(5) | Quantum dots |
| 1st Author's Name | Takahiro KITADA |
| 1st Author's Affiliation | Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima() |
| 2nd Author's Name | Tomoya TAKAHASHI |
| 2nd Author's Affiliation | Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima |
| 3rd Author's Name | Ken MORITA |
| 3rd Author's Affiliation | Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima |
| 4th Author's Name | Toshiro ISU |
| 4th Author's Affiliation | Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima |
| Date | 2010-01-29 |
| Paper # | PN2009-51,OPE2009-189,LQE2009-171 |
| Volume (vol) | vol.109 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |