| Presentation | 2010-01-29 Half-cladding semiconductor light source for control of optical-wave Hiroki FUJIOKA, Naokatsu YAMAMOTO, Kouichi AKAHANE, Tetsuya KAWANISHI, Hiroshi TAKAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A control technique of optical-wave conditions is one of the important issues for developing novel photonic devices. Difficult fabrication techniques with a high-aspect ratio are required to achieve a controlling the optical-wave conditions in the conventional photonic devices, since the conventional photonic devices are constructed with thick-cladding layers for a confinement of the optical waves. Therefore, we propose a half-cladding semiconductor light source as a novel photonic device structure. By using the half-cladding semiconductor structure, it is expected that the optical-wave conditions in the device can be effectively controlled with surface micro structures. In this paper, we report here the fabrication techniques and device characteristics of the half-cladding semiconductor light source. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Semiconductor laser diode / Control of optical-wave / Anisotropic chemical etching / Selective oxidation / Half-cladding semiconductor structure |
| Paper # | PN2009-50,OPE2009-188,LQE2009-170 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2010/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Half-cladding semiconductor light source for control of optical-wave |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor laser diode |
| Keyword(2) | Control of optical-wave |
| Keyword(3) | Anisotropic chemical etching |
| Keyword(4) | Selective oxidation |
| Keyword(5) | Half-cladding semiconductor structure |
| 1st Author's Name | Hiroki FUJIOKA |
| 1st Author's Affiliation | Tokyo Denki University(TDU)() |
| 2nd Author's Name | Naokatsu YAMAMOTO |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 3rd Author's Name | Kouichi AKAHANE |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 4th Author's Name | Tetsuya KAWANISHI |
| 4th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 5th Author's Name | Hiroshi TAKAI |
| 5th Author's Affiliation | Tokyo Denki University(TDU) |
| Date | 2010-01-29 |
| Paper # | PN2009-50,OPE2009-188,LQE2009-170 |
| Volume (vol) | vol.109 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |