Presentation 2009-12-11
Multistacked InAs quantum dot laser operating at 1.55μm
Kouichi AKAHANE, Naokatsu YAMAMOTO, Tetsuya KAWANISHI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Semiconductor quantum dots (QDs) grown in the Stranski-Krastanow (S-K) mode by self-assembly techniques could be used to fabricate high-performance optical devices such as QD lasers and QD semiconductor optical amplifier (SOA). The increase in QD density required for its application in lasers and amplifiers can be realized by vertically stacking the QDs. However, the accumulation of strain limits the number of layers that can be stacked by conventional techniques. It is difficult to overcome this problem in self-assembled QDs because strain is the main driving force for the formation of three-dimensional islandsin the S-K growth mode. We established a technique involving strain compensation to fabricate multistacked InAs QD structures on InP(311)B substrate; by using this technique, we successfully stacked 150 layers of InAs QDs without any degradation in QD quality. Further, we successfully fabricated multistacked QD laser operating at 1.55μm. The ground-state emission of the laser was centered at 1529 nm, and the laser had a high characteristic temperature (T_0) of 113K, which is the highest value achieved for a 1.55-μm band semiconductor laser.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum dot / Semiconductor laser / Strain compensation / Multistack
Paper # LQE2009-149
Date of Issue

Conference Information
Committee LQE
Conference Date 2009/12/4(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Multistacked InAs quantum dot laser operating at 1.55μm
Sub Title (in English)
Keyword(1) Quantum dot
Keyword(2) Semiconductor laser
Keyword(3) Strain compensation
Keyword(4) Multistack
1st Author's Name Kouichi AKAHANE
1st Author's Affiliation National Institute of Information and Communications Technology()
2nd Author's Name Naokatsu YAMAMOTO
2nd Author's Affiliation National Institute of Information and Communications Technology
3rd Author's Name Tetsuya KAWANISHI
3rd Author's Affiliation National Institute of Information and Communications Technology
Date 2009-12-11
Paper # LQE2009-149
Volume (vol) vol.109
Number (no) 331
Page pp.pp.-
#Pages 4
Date of Issue