Presentation | 2009-12-11 Multistacked InAs quantum dot laser operating at 1.55μm Kouichi AKAHANE, Naokatsu YAMAMOTO, Tetsuya KAWANISHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Semiconductor quantum dots (QDs) grown in the Stranski-Krastanow (S-K) mode by self-assembly techniques could be used to fabricate high-performance optical devices such as QD lasers and QD semiconductor optical amplifier (SOA). The increase in QD density required for its application in lasers and amplifiers can be realized by vertically stacking the QDs. However, the accumulation of strain limits the number of layers that can be stacked by conventional techniques. It is difficult to overcome this problem in self-assembled QDs because strain is the main driving force for the formation of three-dimensional islandsin the S-K growth mode. We established a technique involving strain compensation to fabricate multistacked InAs QD structures on InP(311)B substrate; by using this technique, we successfully stacked 150 layers of InAs QDs without any degradation in QD quality. Further, we successfully fabricated multistacked QD laser operating at 1.55μm. The ground-state emission of the laser was centered at 1529 nm, and the laser had a high characteristic temperature (T_0) of 113K, which is the highest value achieved for a 1.55-μm band semiconductor laser. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Quantum dot / Semiconductor laser / Strain compensation / Multistack |
Paper # | LQE2009-149 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2009/12/4(1days) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Multistacked InAs quantum dot laser operating at 1.55μm |
Sub Title (in English) | |
Keyword(1) | Quantum dot |
Keyword(2) | Semiconductor laser |
Keyword(3) | Strain compensation |
Keyword(4) | Multistack |
1st Author's Name | Kouichi AKAHANE |
1st Author's Affiliation | National Institute of Information and Communications Technology() |
2nd Author's Name | Naokatsu YAMAMOTO |
2nd Author's Affiliation | National Institute of Information and Communications Technology |
3rd Author's Name | Tetsuya KAWANISHI |
3rd Author's Affiliation | National Institute of Information and Communications Technology |
Date | 2009-12-11 |
Paper # | LQE2009-149 |
Volume (vol) | vol.109 |
Number (no) | 331 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |