| Presentation | 2009-12-11 AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation Ayahito UETAKE, Koji OTSUBO, Manabu MATSUDA, Shigekazu OKUMURA, Mitsuru EKAWA, Tsuyoshi YAMAMOTO, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters. In order to realize high-speed directly modulated lasers with low driving current, we have investigated AlGaInAs-based multiple-quantum-well (MQW) lasers combined with semi-insulating buried-heterostructure (SI-BH). In this paper, we report 1.3-μm and 1.55-μm AlGaInAs-MQW SI-BH distributed reflector (DR) lasers with passive reflectors on both sides of very short active region. We successfully achieved very high slope values of relaxation oscillation frequency (f_r) and realized 40-Gbps direct modulation with low driving-current. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 1.3-μm / 1.55-μm / AlGaInAs multiple-quantum-well / semi-insulating buried-heterostructure / directly-modulated lasers / 40-Gbps / relaxation oscillation frequency |
| Paper # | LQE2009-148 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2009/12/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation |
| Sub Title (in English) | |
| Keyword(1) | 1.3-μm |
| Keyword(2) | 1.55-μm |
| Keyword(3) | AlGaInAs multiple-quantum-well |
| Keyword(4) | semi-insulating buried-heterostructure |
| Keyword(5) | directly-modulated lasers |
| Keyword(6) | 40-Gbps |
| Keyword(7) | relaxation oscillation frequency |
| 1st Author's Name | Ayahito UETAKE |
| 1st Author's Affiliation | Optoelectronic Industry and Technology Development Association:Fujitsu Ltd.:Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Koji OTSUBO |
| 2nd Author's Affiliation | Optoelectronic Industry and Technology Development Association:Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Manabu MATSUDA |
| 3rd Author's Affiliation | Optoelectronic Industry and Technology Development Association:Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
| 4th Author's Name | Shigekazu OKUMURA |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Mitsuru EKAWA |
| 5th Author's Affiliation | Optoelectronic Industry and Technology Development Association:Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
| 6th Author's Name | Tsuyoshi YAMAMOTO |
| 6th Author's Affiliation | Optoelectronic Industry and Technology Development Association:Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
| Date | 2009-12-11 |
| Paper # | LQE2009-148 |
| Volume (vol) | vol.109 |
| Number (no) | 331 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |