| Presentation | 2009-12-11 Continuous wave operation of GaJnAsP/InP thin film lateral current injection lasers on SI-InP Tadashi OKUMURA, Hitomi ITO, Daisuke KONDO, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Semiconductor membrane laser, which consists of a high-ondex contrast waveguide, is very promising for low power light sources with very short cavity length due to an enhanced modal gain. We have fabricated a lateral current injection (LCI) p-i-n structure with a thin GaInAsP core layer on a semi insulating substrate for injection type membrane laser, however the device characteristics were not satisfactory to realize high performance operation based on high-index contrast waveguides. In this paper, we report improved lasing characteristics, ie. an increase of the internal quantum efficiency, reduced threshold current density, and increased differential quantum efficiency. A room-temperature (RT) continuous wave (CW) operation with a threshold current of 11 mA, which corresponds to a threshold current density of 0.9 kA/cm^2, was obtained for a 1.7 μm stripe width and 730 μm long Fabry-Perot (F.P.) cavity laser. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Semiconductor membrane laser / Lateral current injection / Semi-insulating substrate / High optical confinement |
| Paper # | LQE2009-147 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2009/12/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Continuous wave operation of GaJnAsP/InP thin film lateral current injection lasers on SI-InP |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor membrane laser |
| Keyword(2) | Lateral current injection |
| Keyword(3) | Semi-insulating substrate |
| Keyword(4) | High optical confinement |
| 1st Author's Name | Tadashi OKUMURA |
| 1st Author's Affiliation | Quantum Nanoelectronics Research Center, Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology() |
| 2nd Author's Name | Hitomi ITO |
| 2nd Author's Affiliation | Quantum Nanoelectronics Research Center, Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 3rd Author's Name | Daisuke KONDO |
| 3rd Author's Affiliation | Quantum Nanoelectronics Research Center, Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 4th Author's Name | Nobuhiko NISHIYAMA |
| 4th Author's Affiliation | Quantum Nanoelectronics Research Center, Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 5th Author's Name | Shigehisa ARAI |
| 5th Author's Affiliation | Quantum Nanoelectronics Research Center, Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| Date | 2009-12-11 |
| Paper # | LQE2009-147 |
| Volume (vol) | vol.109 |
| Number (no) | 331 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |