Presentation 2009-12-11
Analysis of Stable Behavior in InAs/InP MQW DFB laser Using an OBIC Monitor
Tatsuya TAKESHITA, Tomonari SATO, Manabu MITSUHARA, Yasuhiro KONDO, Hiromi OOHASHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have realized reliable 2.3 μm wavelength InAs/InP MQW DFB lasers for trace gas monitoring applications. The estimated median lifetime exceeds 1 x 10^5 hours during aging at an ambient temperature of 45℃ and with a constant output power of 3 mW. It is clarified that the main degradation mechanism in DFB lasers with highly strained InAs quantum wells is dominated by a diffusion process as found with conventional telecommunication lasers. Furthermore, stable behavior devices with deviation from the conventional t^<0.5> deterioration are analyzed by using the optical beam induced current (OBIC) technique. We found that a decrease in the carrier concentration of the p-type InP buried layer caused by aging leads to a decrease in the pass current and an increase in the operating current is suppressed.
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Keyword(in English) semiconductor lasers / quantum well lasers / failure analysis / reliability / aging
Paper # LQE2009-143
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Committee LQE
Conference Date 2009/12/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Stable Behavior in InAs/InP MQW DFB laser Using an OBIC Monitor
Sub Title (in English)
Keyword(1) semiconductor lasers
Keyword(2) quantum well lasers
Keyword(3) failure analysis
Keyword(4) reliability
Keyword(5) aging
1st Author's Name Tatsuya TAKESHITA
1st Author's Affiliation NTT Photonics Laboratories, NTT Corporation()
2nd Author's Name Tomonari SATO
2nd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
3rd Author's Name Manabu MITSUHARA
3rd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
4th Author's Name Yasuhiro KONDO
4th Author's Affiliation NTT Photonics Laboratories, NTT Corporation
5th Author's Name Hiromi OOHASHI
5th Author's Affiliation NTT Photonics Laboratories, NTT Corporation
Date 2009-12-11
Paper # LQE2009-143
Volume (vol) vol.109
Number (no) 331
Page pp.pp.-
#Pages 6
Date of Issue