| Presentation | 2009-12-18 Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinozima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi Itabashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated monolithically integrated Ge p-i-n photodiodes and Si variable optical attenuators (VOAs). The Ge photodiode exhibits low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. Si VOA also shows efficient light attenuation, as the injection current increases. Furthermore, the Ge photodiode shows approximately 1 GHz of 3-dB cut-off frequency while fall and rise time of Si VOAs are few nanoseconds. These dynamic properties ensure synchronized operation between Si VOA and Ge photodiode at 100 MHz. Such a device configuration, consisting of a tapping splitter, a Ge photodiode as a monitoring detector, and a Si VOA is useful for a signal equalization application in burst-mode optical communication. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si VOA / Ge photodiode / Monolithic integration / Synchronized operation |
| Paper # | OPE2009-169 |
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| Conference Information | |
| Committee | OPE |
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| Conference Date | 2009/12/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode |
| Sub Title (in English) | |
| Keyword(1) | Si VOA |
| Keyword(2) | Ge photodiode |
| Keyword(3) | Monolithic integration |
| Keyword(4) | Synchronized operation |
| 1st Author's Name | Sungbong Park |
| 1st Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corp.() |
| 2nd Author's Name | Tai Tsuchizawa |
| 2nd Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corp. |
| 3rd Author's Name | Toshifumi Watanabe |
| 3rd Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corp. |
| 4th Author's Name | Hiroyuki Shinozima |
| 4th Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corp. |
| 5th Author's Name | Hidetaka Nishi |
| 5th Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corp. |
| 6th Author's Name | Koji Yamada |
| 6th Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corp. |
| 7th Author's Name | Yasuhiko Ishikawa |
| 7th Author's Affiliation | Department of Materials Engineering, The University of Tokyo |
| 8th Author's Name | Kazumi Wada |
| 8th Author's Affiliation | Department of Materials Engineering, The University of Tokyo |
| 9th Author's Name | Seiichi Itabashi |
| 9th Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corp. |
| Date | 2009-12-18 |
| Paper # | OPE2009-169 |
| Volume (vol) | vol.109 |
| Number (no) | 353 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |