Presentation 2010-01-28
Fabrication of h-BN powder by chemical vapor deposition
Manabu YAMAUCHI, Hiroko KOMINAMI, Yoichiro NAKANISHI, Kazuhiko HARA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Hexagonal boron nitride (h-BN) powders have been fabricated by a chemical vapor method aiming at its application for the UV phosphors. The purposes of this study are the optimization of synthesis conditions and the characterization of luminescence properties of h-BN. The dependence of synthesis conditions on the powder properties has been examined by changing mainly flow rates of gases with a reaction temperature kept at 1800℃ during synthesis. The X-ray diffraction measurement has revealed that the samples include amorphous or the other unknown phase. On the other hand, the sample showing the band edge emission in the wavelength region of 215~240nm has been fabricated although the cathodoluminescence spectrum is dominated by the impurity-related band in 300~350nm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) hexagonal boron nitride / UV emission / chemical vapor synthesis / cathodoluminescence
Paper # EID2009-60
Date of Issue

Conference Information
Committee EID
Conference Date 2010/1/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electronic Information Displays (EID)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of h-BN powder by chemical vapor deposition
Sub Title (in English)
Keyword(1) hexagonal boron nitride
Keyword(2) UV emission
Keyword(3) chemical vapor synthesis
Keyword(4) cathodoluminescence
1st Author's Name Manabu YAMAUCHI
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Hiroko KOMINAMI
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Yoichiro NAKANISHI
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Kazuhiko HARA
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2010-01-28
Paper # EID2009-60
Volume (vol) vol.109
Number (no) 404
Page pp.pp.-
#Pages 3
Date of Issue