| Presentation | 2010-01-28 Preparation and CL properties of SrGa_2S_4:Eu thin film phosphors by laser annealing Takahisa YAMASAKI, Toshiaki SEINO, Hiroko KOMINAMI, Yoichiro NAKANISHI, Yoshinori HATANAKA, Kazuhiko HARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, We have been prepared the SrGa_2S_4:Eu thin film phosphors. Preparation of the SrGa_2S_4:Eu needs high temperature annealing. But an ordinary substrate can't stand high temperature over 600℃. We use the laser annealing method, in order to solve this problem. In the before study, KrF excimer laser (248nm) was used for beam source. It was difficult to achieve good emission properties by this method. In the present study, Nd:YAG laser (355nm) was used, and we analyzed effect of this change. Two pellets, Ga_2S_3:Eu(1 mol%) and SrS:Eu(2 mol%) are deposited by two Electron Beams (EB) evaporation system. After deposited, high temperature annealing (850℃) and laser annealing after pre-annealing (500℃) were carried out. On the latter method samples showed SrGa_2S_4 phase by XRD, and green emissin peaked at 533 nm based on Eu^<2+> ion in SrGa_2S_4. Therefore, it was found that high-luminance SrGa_2S_4:Eu thin film can be prepared on low temperature lower than 600℃. On the CL luminance, it was showed 18,000 cd/m^2 higher than the high temperature annealing sample under excitation with 10kV, 60μA/cm^2. This result showed the strong improvement of emitting properties was achieved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SrGa_2S_4 / Thin film phosphors / Two Electron Besms / XRD / CL |
| Paper # | EID2009-58 |
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| Committee | EID |
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| Conference Date | 2010/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation and CL properties of SrGa_2S_4:Eu thin film phosphors by laser annealing |
| Sub Title (in English) | |
| Keyword(1) | SrGa_2S_4 |
| Keyword(2) | Thin film phosphors |
| Keyword(3) | Two Electron Besms |
| Keyword(4) | XRD |
| Keyword(5) | CL |
| 1st Author's Name | Takahisa YAMASAKI |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Toshiaki SEINO |
| 2nd Author's Affiliation | Japan Steel Works |
| 3rd Author's Name | Hiroko KOMINAMI |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Yoichiro NAKANISHI |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Yoshinori HATANAKA |
| 5th Author's Affiliation | Department of Electronics and Information Engineering, Aichi University of Technology |
| 6th Author's Name | Kazuhiko HARA |
| 6th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2010-01-28 |
| Paper # | EID2009-58 |
| Volume (vol) | vol.109 |
| Number (no) | 404 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |