| Presentation | 2010-01-28 BaAl_2S_4:Eu EL Devices Prepared by DC-Reactive-Sputtering Yasuhiro WATANABE, Noboru MIURA, Hironaga MATSUMOTO, Ryotaro NAKANO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | BaAl_2S_4:Eu thin films were prepared by DC reactive sputtering using Ar;H2S mixture gas. It was found that best condition of flow ratio (H2S/total gas) is 2%. The crystallinity and PL characteristics of BaAl_2S_4:Eu thin films show best under the condition of substrate temperature during the sputtering and annealing temperature are 400℃ and 790℃, respectively. EL devices having double insulating structure were fabricated with these conditions. The maximum luminance was 14.4 cd/m2 under the 1 kHz sinusoidal voltage. The maximum luminance level increased with insert the buffer layers between the phosphor layer and both insulating layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BaAl_2S_4:Eu / DC reactive sputtering / Electroluminescence |
| Paper # | EID2009-57 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2010/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | BaAl_2S_4:Eu EL Devices Prepared by DC-Reactive-Sputtering |
| Sub Title (in English) | |
| Keyword(1) | BaAl_2S_4:Eu |
| Keyword(2) | DC reactive sputtering |
| Keyword(3) | Electroluminescence |
| 1st Author's Name | Yasuhiro WATANABE |
| 1st Author's Affiliation | Department of Electronics & Communications, School of Science & Technology, Meiji University() |
| 2nd Author's Name | Noboru MIURA |
| 2nd Author's Affiliation | Department of Electronics & Communications, School of Science & Technology, Meiji University |
| 3rd Author's Name | Hironaga MATSUMOTO |
| 3rd Author's Affiliation | Department of Electronics & Communications, School of Science & Technology, Meiji University |
| 4th Author's Name | Ryotaro NAKANO |
| 4th Author's Affiliation | Department of Electronics & Communications, School of Science & Technology, Meiji University |
| Date | 2010-01-28 |
| Paper # | EID2009-57 |
| Volume (vol) | vol.109 |
| Number (no) | 404 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |