Presentation 2010-01-28
Si doped AlN : Eu Thin-Film EL Devices Prepared by Sputtering Method
Ikuhiro Inada, Noboru Miura, Hironaga Matsumoto, Ryotaro Nakano,
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Abstract(in English) Silicon doped blue-emitting AlN:Eu thin-films were prepared by rf magnetron sputtering method. The concentration of Eu and Si was controlled with the EuF_3 and Si_3N_4 contents in Al-based composite targets. PL spectra of Si doped AlN:Eu thin-films appeared at blue region having a peak around 450 nm due to the transition of divalent Eu ion. The Commission International de l'Eclairage (CIE) color coordinates were x=0.169 and y=0.130. To understand the effects of Si doping in the AlN:Eu thin-film phosphor, concentration dependence was measured. Although EL devices having the double insulating structure with using BaTa_2O_6 insulating film were also fabricated, the luminance was poor.
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Keyword(in English) EL / Thin-film / AlN / Sputtering / Si doping
Paper # EID2009-56
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Committee EID
Conference Date 2010/1/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Si doped AlN : Eu Thin-Film EL Devices Prepared by Sputtering Method
Sub Title (in English)
Keyword(1) EL
Keyword(2) Thin-film
Keyword(3) AlN
Keyword(4) Sputtering
Keyword(5) Si doping
1st Author's Name Ikuhiro Inada
1st Author's Affiliation Department of Electronics & Communications, School of Science and Technology, Meiji University()
2nd Author's Name Noboru Miura
2nd Author's Affiliation Department of Electronics & Communications, School of Science and Technology, Meiji University
3rd Author's Name Hironaga Matsumoto
3rd Author's Affiliation Department of Electronics & Communications, School of Science and Technology, Meiji University
4th Author's Name Ryotaro Nakano
4th Author's Affiliation Department of Electronics & Communications, School of Science and Technology, Meiji University
Date 2010-01-28
Paper # EID2009-56
Volume (vol) vol.109
Number (no) 404
Page pp.pp.-
#Pages 4
Date of Issue