| Presentation | 2010-01-28 Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Tomohiko YAMAGUCHI, Kouhewi IGARASHI, Takeshi FUKUDA, Zentaro HONDA, Norihiko KAMATA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated below-gap levels in MOCVD-grown Si-doped In_<0.16>Ga_<0.84>N/In_<0.02>Ga_<0.98>N Quantum well (QW) structures by an optical method of Two-wavelength Excited Photoluminescence, as the non-destructive, non-contacting spectroscopy without electrode. Though the dependence of intensity and energy (1.27～1.95eV) of the below-gap excitation on the photoluminescence intensity change, we found that Si-doping in both barrier and well layers reduced the density of below-gap states in the QW region. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN / Si-doping / Quantum well structure / Non-radiative recombination center / Two-wavelength excited photoluminescence |
| Paper # | EID2009-55 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2010/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence |
| Sub Title (in English) | |
| Keyword(1) | InGaN |
| Keyword(2) | Si-doping |
| Keyword(3) | Quantum well structure |
| Keyword(4) | Non-radiative recombination center |
| Keyword(5) | Two-wavelength excited photoluminescence |
| 1st Author's Name | Tomohiko YAMAGUCHI |
| 1st Author's Affiliation | Graduate School of Science and Engineering, Saitama University() |
| 2nd Author's Name | Kouhewi IGARASHI |
| 2nd Author's Affiliation | Graduate School of Science and Engineering, Saitama University |
| 3rd Author's Name | Takeshi FUKUDA |
| 3rd Author's Affiliation | Graduate School of Science and Engineering, Saitama University |
| 4th Author's Name | Zentaro HONDA |
| 4th Author's Affiliation | Graduate School of Science and Engineering, Saitama University |
| 5th Author's Name | Norihiko KAMATA |
| 5th Author's Affiliation | Graduate School of Science and Engineering, Saitama University |
| Date | 2010-01-28 |
| Paper # | EID2009-55 |
| Volume (vol) | vol.109 |
| Number (no) | 404 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |