Presentation 2010-01-28
Solution-processed n-ZnO nanocrystal / p-pentacene heterojunction EL devices
Hayato KAWASAKI, Hisazumi TAKEUCHI, Toshihiko TOYAMA, Hiroaki OKAMOTO,
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Abstract(in English) We demonstrate DC-driven hybrid EL devices composed of solution-processed n-ZnO nanocrystal (NC) emission layers and p-pentacene hole-transport layers. The structure of the EL device was glass/ITO/emission layer/pentacene/Al. The emission layer consisting of ZnO NCs with a crystal size of 8 nm was prepared by a screen-printing method. When the ITO-electrode was positively biased over 10 V, the EL emission, consisting of sharp ultraviolet (~380nm) and broad green-yellow (~560nm) spectral components, was observed. We introduced another pentacene layer at the cathode side, and found that the green-yellow component decreased.
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Keyword(in English) nanocrystal / EL / ZnO / excition recombination / screen-printing
Paper # EID2009-54
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Committee EID
Conference Date 2010/1/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Solution-processed n-ZnO nanocrystal / p-pentacene heterojunction EL devices
Sub Title (in English)
Keyword(1) nanocrystal
Keyword(2) EL
Keyword(3) ZnO
Keyword(4) excition recombination
Keyword(5) screen-printing
1st Author's Name Hayato KAWASAKI
1st Author's Affiliation Osaka University, Graduate School of Engineering Science()
2nd Author's Name Hisazumi TAKEUCHI
2nd Author's Affiliation Osaka University, Graduate School of Engineering Science
3rd Author's Name Toshihiko TOYAMA
3rd Author's Affiliation Osaka University, Graduate School of Engineering Science
4th Author's Name Hiroaki OKAMOTO
4th Author's Affiliation Osaka University, Graduate School of Engineering Science
Date 2010-01-28
Paper # EID2009-54
Volume (vol) vol.109
Number (no) 404
Page pp.pp.-
#Pages 4
Date of Issue