Presentation 2010-01-12
Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method
Takahiro FUJII, Hiroyuki MATSUI, Tatsuo HASEGAWA, Shigekazu KUNIYOSHI, Masatoshi SAKAI, Kazuhiro KUDO, Masakazu NAKAMURA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Trap states at organic/gate insulator interfaces in organic thin-film transistors (OTFTs) greatly influence on the characteristics and stability of OTFTs. We have been quantitatively studying the density of interface trap states using an originally developed instrument for in-situ field-effect thermally-stimulated-current (FE-TSC) method which enables us to characterize the trap states without exposing the sample to the air. By this instrument, the density of trap states at pure pentacene/gate insulator interface has been estimated. The results indicated the existence of an isolated trap state at 70-100 meV above pentacene-HOMO-edge, of which energy was insensitive to the chemical structure of the gate insulator surface.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) pentacene / organic thin-film transistor / interface trap state / thermally stimulated current method
Paper # OME2009-76
Date of Issue

Conference Information
Committee OME
Conference Date 2010/1/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method
Sub Title (in English)
Keyword(1) pentacene
Keyword(2) organic thin-film transistor
Keyword(3) interface trap state
Keyword(4) thermally stimulated current method
1st Author's Name Takahiro FUJII
1st Author's Affiliation Graduate School of Engineering, Chiba University()
2nd Author's Name Hiroyuki MATSUI
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology Photonics Research Institute
3rd Author's Name Tatsuo HASEGAWA
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology Photonics Research Institute:Department of Advanced Materials Science, University of Tokyo
4th Author's Name Shigekazu KUNIYOSHI
4th Author's Affiliation Graduate School of Engineering, Chiba University
5th Author's Name Masatoshi SAKAI
5th Author's Affiliation Graduate School of Engineering, Chiba University
6th Author's Name Kazuhiro KUDO
6th Author's Affiliation Graduate School of Engineering, Chiba University
7th Author's Name Masakazu NAKAMURA
7th Author's Affiliation Graduate School of Engineering, Chiba University
Date 2010-01-12
Paper # OME2009-76
Volume (vol) vol.109
Number (no) 359
Page pp.pp.-
#Pages 6
Date of Issue