Presentation | 2010-01-12 Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method Takahiro FUJII, Hiroyuki MATSUI, Tatsuo HASEGAWA, Shigekazu KUNIYOSHI, Masatoshi SAKAI, Kazuhiro KUDO, Masakazu NAKAMURA, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Trap states at organic/gate insulator interfaces in organic thin-film transistors (OTFTs) greatly influence on the characteristics and stability of OTFTs. We have been quantitatively studying the density of interface trap states using an originally developed instrument for in-situ field-effect thermally-stimulated-current (FE-TSC) method which enables us to characterize the trap states without exposing the sample to the air. By this instrument, the density of trap states at pure pentacene/gate insulator interface has been estimated. The results indicated the existence of an isolated trap state at 70-100 meV above pentacene-HOMO-edge, of which energy was insensitive to the chemical structure of the gate insulator surface. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | pentacene / organic thin-film transistor / interface trap state / thermally stimulated current method |
Paper # | OME2009-76 |
Date of Issue |
Conference Information | |
Committee | OME |
---|---|
Conference Date | 2010/1/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Organic Material Electronics (OME) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method |
Sub Title (in English) | |
Keyword(1) | pentacene |
Keyword(2) | organic thin-film transistor |
Keyword(3) | interface trap state |
Keyword(4) | thermally stimulated current method |
1st Author's Name | Takahiro FUJII |
1st Author's Affiliation | Graduate School of Engineering, Chiba University() |
2nd Author's Name | Hiroyuki MATSUI |
2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology Photonics Research Institute |
3rd Author's Name | Tatsuo HASEGAWA |
3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology Photonics Research Institute:Department of Advanced Materials Science, University of Tokyo |
4th Author's Name | Shigekazu KUNIYOSHI |
4th Author's Affiliation | Graduate School of Engineering, Chiba University |
5th Author's Name | Masatoshi SAKAI |
5th Author's Affiliation | Graduate School of Engineering, Chiba University |
6th Author's Name | Kazuhiro KUDO |
6th Author's Affiliation | Graduate School of Engineering, Chiba University |
7th Author's Name | Masakazu NAKAMURA |
7th Author's Affiliation | Graduate School of Engineering, Chiba University |
Date | 2010-01-12 |
Paper # | OME2009-76 |
Volume (vol) | vol.109 |
Number (no) | 359 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |