| Presentation | 2010-01-12 Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method Takahiro FUJII, Hiroyuki MATSUI, Tatsuo HASEGAWA, Shigekazu KUNIYOSHI, Masatoshi SAKAI, Kazuhiro KUDO, Masakazu NAKAMURA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Trap states at organic/gate insulator interfaces in organic thin-film transistors (OTFTs) greatly influence on the characteristics and stability of OTFTs. We have been quantitatively studying the density of interface trap states using an originally developed instrument for in-situ field-effect thermally-stimulated-current (FE-TSC) method which enables us to characterize the trap states without exposing the sample to the air. By this instrument, the density of trap states at pure pentacene/gate insulator interface has been estimated. The results indicated the existence of an isolated trap state at 70-100 meV above pentacene-HOMO-edge, of which energy was insensitive to the chemical structure of the gate insulator surface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | pentacene / organic thin-film transistor / interface trap state / thermally stimulated current method |
| Paper # | OME2009-76 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2010/1/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method |
| Sub Title (in English) | |
| Keyword(1) | pentacene |
| Keyword(2) | organic thin-film transistor |
| Keyword(3) | interface trap state |
| Keyword(4) | thermally stimulated current method |
| 1st Author's Name | Takahiro FUJII |
| 1st Author's Affiliation | Graduate School of Engineering, Chiba University() |
| 2nd Author's Name | Hiroyuki MATSUI |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology Photonics Research Institute |
| 3rd Author's Name | Tatsuo HASEGAWA |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology Photonics Research Institute:Department of Advanced Materials Science, University of Tokyo |
| 4th Author's Name | Shigekazu KUNIYOSHI |
| 4th Author's Affiliation | Graduate School of Engineering, Chiba University |
| 5th Author's Name | Masatoshi SAKAI |
| 5th Author's Affiliation | Graduate School of Engineering, Chiba University |
| 6th Author's Name | Kazuhiro KUDO |
| 6th Author's Affiliation | Graduate School of Engineering, Chiba University |
| 7th Author's Name | Masakazu NAKAMURA |
| 7th Author's Affiliation | Graduate School of Engineering, Chiba University |
| Date | 2010-01-12 |
| Paper # | OME2009-76 |
| Volume (vol) | vol.109 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |