Presentation 2010-01-12
Thermal stability of organic trasistors with self-assembled monolayer dielectrics
Kazunori Kuribara, Kenjiro Fukuda, Tomoyuki Yokota, Tsuyoshi Sekitani, Ute Zschieschang, Hagen Klauk, Takao Someya,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have systematically investigated effects of annealing processes on pentacene field-effect transistors (FETs) with a self-assembled monolayer as gate dielectrics. When FETs without encapsulation layers are annealed at 100℃, they exhibit an irreversible degradation. However, such degradation can be suppressed significantly when the FETs are encapsulated with a 2.5-μm-thick polychloro-para-xylylene passivation layer; the mobility decreases by only 12%even after annealing at 140℃. The X-ray diffraction (XRD) measurement revealed that the pentacene thin-film phase did not change to the bulk phase even after annealing at 160℃ when pentacene was encapsulated with the parylene layers.
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # OME2009-72
Date of Issue

Conference Information
Committee OME
Conference Date 2010/1/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermal stability of organic trasistors with self-assembled monolayer dielectrics
Sub Title (in English)
Keyword(1)
1st Author's Name Kazunori Kuribara
1st Author's Affiliation Department of Electrical and Electronic Engineering and Department of Applied Physics, The University of Tokyo()
2nd Author's Name Kenjiro Fukuda
2nd Author's Affiliation Department of Electrical and Electronic Engineering and Department of Applied Physics, The University of Tokyo
3rd Author's Name Tomoyuki Yokota
3rd Author's Affiliation Department of Electrical and Electronic Engineering and Department of Applied Physics, The University of Tokyo
4th Author's Name Tsuyoshi Sekitani
4th Author's Affiliation Department of Electrical and Electronic Engineering and Department of Applied Physics, The University of Tokyo
5th Author's Name Ute Zschieschang
5th Author's Affiliation Max Planck Institute for Solid State Research
6th Author's Name Hagen Klauk
6th Author's Affiliation Max Planck Institute for Solid State Research
7th Author's Name Takao Someya
7th Author's Affiliation Department of Electrical and Electronic Engineering and Department of Applied Physics, The University of Tokyo
Date 2010-01-12
Paper # OME2009-72
Volume (vol) vol.109
Number (no) 359
Page pp.pp.-
#Pages 4
Date of Issue