Presentation 2010-01-12
High-frequency response of organic transistors manufactured using sub-femtoliter inkjet
Yoshiaki NOGUCHI, Tomoyuki YOKOTA, Tsuyoshi SEKITANI, Takao SOMEYA,
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Abstract(in English) We investigated the frequency response of organic field-effect transistors manufactured using sub-femtoliter inkjet technology. Sub-femtoliter inkjet can create droplets of electrical conductive inks with 0.5~0.7 fL, and thus organic solvents in inks evaporate quickly before impacting organic semiconductors. As a result that this inkjet can manufacture very fine source/drain electrodes onto organic semiconductor directly without any electrical and mechanical damages. Taking advantages of this inkjet technology, we manufactured pentacene transistors with 7-μm-width source drain electrodes, and exhibited mobility of more than 0.2 cm^2/Vs. Furthermore, cutoff frequency of 66 kHz has been achieved because of significant reduction of parasitic capacitance between gate and source/drain electrodes.
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Keyword(in English) Organic Field-Effect Transistor / Pentacene / frequency response
Paper # OME2009-68
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Committee OME
Conference Date 2010/1/5(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-frequency response of organic transistors manufactured using sub-femtoliter inkjet
Sub Title (in English)
Keyword(1) Organic Field-Effect Transistor
Keyword(2) Pentacene
Keyword(3) frequency response
1st Author's Name Yoshiaki NOGUCHI
1st Author's Affiliation Department of Electrical and Electronic Engineering, University of Tokyo()
2nd Author's Name Tomoyuki YOKOTA
2nd Author's Affiliation Department of Electrical and Electronic Engineering, University of Tokyo
3rd Author's Name Tsuyoshi SEKITANI
3rd Author's Affiliation Department of Electrical and Electronic Engineering, University of Tokyo
4th Author's Name Takao SOMEYA
4th Author's Affiliation Department of Electrical and Electronic Engineering, University of Tokyo
Date 2010-01-12
Paper # OME2009-68
Volume (vol) vol.109
Number (no) 359
Page pp.pp.-
#Pages 4
Date of Issue