| Presentation | 2010-01-12 Fabrication and threshold voltage control of organic nonvolatile memory transistors Takashi NAKAGAWA, Tomoyuki YOKOTA, Tsuyoshi SEKITANI, Ken TAKEUCHI, Ute ZSCHIESCHANG, Hagen KLAUK, Takao SOMEYA, |
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| Abstract(in Japanese) | (See Japanese page) | ||||
| Abstract(in English) | We have demonstrated to control threshold voltage (V_ | ) of the organic floating-gate transistors using self-assembled monolayer (SAM) for realizing organic nonvolatile memory array. For programming, -6 V is applied between the control gate and the source contact. To erase, +3 V is applied to discharge the floating gate and recover the initial threshold voltage. The charge retention time was about 10^4 s. The difference between V_ | on program-state and on erase-state (ΔV_ | ) is one of the most important factors for data retention. In this work, with changing the thickness of organic semiconductor pentacene from 10 to 90 nm, ΔV_ | can be systematically changed from 1.6 to 3 V. |
| Keyword(in Japanese) | (See Japanese page) | ||||
| Keyword(in English) | Organic non-volatile memory / Floating-gate / Threshold voltage control / Self-assembled monolayer(SAM) | ||||
| Paper # | OME2009-67 | ||||
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2010/1/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and threshold voltage control of organic nonvolatile memory transistors |
| Sub Title (in English) | |
| Keyword(1) | Organic non-volatile memory |
| Keyword(2) | Floating-gate |
| Keyword(3) | Threshold voltage control |
| Keyword(4) | Self-assembled monolayer(SAM) |
| 1st Author's Name | Takashi NAKAGAWA |
| 1st Author's Affiliation | Faculty of Engineering, Tokyo University() |
| 2nd Author's Name | Tomoyuki YOKOTA |
| 2nd Author's Affiliation | Faculty of Engineering, Tokyo University |
| 3rd Author's Name | Tsuyoshi SEKITANI |
| 3rd Author's Affiliation | Faculty of Engineering, Tokyo University |
| 4th Author's Name | Ken TAKEUCHI |
| 4th Author's Affiliation | Faculty of Engineering, Tokyo University |
| 5th Author's Name | Ute ZSCHIESCHANG |
| 5th Author's Affiliation | Max Planck Institute for Solid State Research |
| 6th Author's Name | Hagen KLAUK |
| 6th Author's Affiliation | Max Planck Institute for Solid State Research |
| 7th Author's Name | Takao SOMEYA |
| 7th Author's Affiliation | Faculty of Engineering, Tokyo University |
| Date | 2010-01-12 |
| Paper # | OME2009-67 |
| Volume (vol) | vol.109 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |