| Presentation | 2010-04-23 Ferroelectric (Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) Teruyoshi HATANAKA, Ryoji YAJIMA, Takeshi HORIUCHI, Shouyu Wang, Xizhen Zhang, Mitsue TAKAHASHI, Shigeki SAKAI, Ken TAKEUCHI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a random write is removed by introducing a batch write algorithm. As a result, the SSD performance can double. The NV-page buffer realizes a power outage immune highly reliable operation. With a low program/erase voltage, 6V and a high endurance, 100million cycles, the proposed Fe-NAND is most suitable for a highly reliable high-speed low power data center application enterprise SSD. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SSD / NAND / Flash / Ferroelectric |
| Paper # | ICD2010-11 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 2010/4/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ferroelectric (Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) |
| Sub Title (in English) | |
| Keyword(1) | SSD |
| Keyword(2) | NAND |
| Keyword(3) | Flash |
| Keyword(4) | Ferroelectric |
| 1st Author's Name | Teruyoshi HATANAKA |
| 1st Author's Affiliation | Graduate School of Engineering, The University of Tokyo() |
| 2nd Author's Name | Ryoji YAJIMA |
| 2nd Author's Affiliation | Graduate School of Engineering, The University of Tokyo |
| 3rd Author's Name | Takeshi HORIUCHI |
| 3rd Author's Affiliation | Novel Electron Devices Group, Nanoelectronics Research Institute National Institute of Advanced Industrial Science and Technology |
| 4th Author's Name | Shouyu Wang |
| 4th Author's Affiliation | Novel Electron Devices Group, Nanoelectronics Research Institute National Institute of Advanced Industrial Science and Technology |
| 5th Author's Name | Xizhen Zhang |
| 5th Author's Affiliation | Novel Electron Devices Group, Nanoelectronics Research Institute National Institute of Advanced Industrial Science and Technology |
| 6th Author's Name | Mitsue TAKAHASHI |
| 6th Author's Affiliation | Novel Electron Devices Group, Nanoelectronics Research Institute National Institute of Advanced Industrial Science and Technology |
| 7th Author's Name | Shigeki SAKAI |
| 7th Author's Affiliation | Novel Electron Devices Group, Nanoelectronics Research Institute National Institute of Advanced Industrial Science and Technology |
| 8th Author's Name | Ken TAKEUCHI |
| 8th Author's Affiliation | Graduate School of Engineering, The University of Tokyo |
| Date | 2010-04-23 |
| Paper # | ICD2010-11 |
| Volume (vol) | vol.110 |
| Number (no) | 9 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |