Presentation 2010-05-14
Preparation and evaluation of Ga_2O_3 oxygen sensors
Shinya KAYANO, Naoya YAMAGUCHI, Masaaki ISAI,
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Abstract(in English) Recentry, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. The Ga_2O_3 has an oxygen detection characteristic at more than 900℃, so this material ttracts much attention as an oxygen sensor at high temperature. The β-Ga_2O_3 films were prepared by the RF magnetron sputtering method. The effect of Ar:O_2 flow ratio, RF power, and thickness of films on the crystal and oxygen sensing properties were investigated. As a result, the superior crystal properties were obtained at the Ar:O_2 flow ratio of 5:1. It was found that the oxygen sensitivity depended on a film thickness.
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Keyword(in English) Gallium oxide / Metal oxides / Magnetron sputtering method / Rapid thermal annealing (RTA) / Oxygen sensor
Paper # ED2010-27,CPM2010-17,SDM2010-27
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Committee SDM
Conference Date 2010/5/6(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation and evaluation of Ga_2O_3 oxygen sensors
Sub Title (in English)
Keyword(1) Gallium oxide
Keyword(2) Metal oxides
Keyword(3) Magnetron sputtering method
Keyword(4) Rapid thermal annealing (RTA)
Keyword(5) Oxygen sensor
1st Author's Name Shinya KAYANO
1st Author's Affiliation Graduate School of Engineering, Shizuoka University()
2nd Author's Name Naoya YAMAGUCHI
2nd Author's Affiliation Faculty of Engineering, Shizuoka University
3rd Author's Name Masaaki ISAI
3rd Author's Affiliation Faculty of Engineering, Shizuoka University
Date 2010-05-14
Paper # ED2010-27,CPM2010-17,SDM2010-27
Volume (vol) vol.110
Number (no) 31
Page pp.pp.-
#Pages 4
Date of Issue