| Presentation | 2010-05-13 Improved p-InGaN/AlGaN/GaN normally-off HEMTs on silicon substrates kazuhiro NAGAI, Lawrence SELVARAJ, Takashi EGAWA, |
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| PDF Download Page |  PDF download Page Link |
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| Abstract(in Japanese) | (See Japanese page) | |
| Abstract(in English) | Normally-off AlGaN/GaN HEMTs with Mg-doped p-InGaN cap layer were grown and HEMT devices were processed at different active annealing temperatures (700℃ to 850℃). For activation annealing at 800℃, a good pinch-off at a device threshold voltage of 1.48 V was obtained with good pinch-off characteristics. A positive shift of 3 V for our devices was confirmed when compared to the already existing AlGaN/GaN HEMTs. Also HEMTs with p-InGaN grown at different growth temperature (700℃ to 1000℃) were studied and a V_ | of 1.62 V was observed for p-InGaN grown at 800℃. Further these HEMTs demonstrate a good I_ |
| Keyword(in Japanese) | (See Japanese page) | |
| Keyword(in English) | Si substrate / AlGaN/GaN / HEMT / normally-off | |
| Paper # | ED2010-18,CPM2010-8,SDM2010-18 | |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2010/5/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improved p-InGaN/AlGaN/GaN normally-off HEMTs on silicon substrates |
| Sub Title (in English) | |
| Keyword(1) | Si substrate |
| Keyword(2) | AlGaN/GaN |
| Keyword(3) | HEMT |
| Keyword(4) | normally-off |
| 1st Author's Name | kazuhiro NAGAI |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Lawrence SELVARAJ |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi EGAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2010-05-13 |
| Paper # | ED2010-18,CPM2010-8,SDM2010-18 |
| Volume (vol) | vol.110 |
| Number (no) | 31 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |