Presentation | 2010-02-23 CMOS inverter based on carbon nanotube field-effect transistors with SiNx passivation films Takaomi KISHIMOTO, Yasuhide OHNO, Kenzo MAEHASHI, Koichi INOUE, Kazuhiko MATSUMOTO, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have demonstrated logic gates based on complementary carbon nanotube field-effect transistors(CNT-FETs)with SiN_x passivation films deposited by catalytic chemical vapor deposition. Carrier types in CNT-FETs were controlled by forming SiN_x passivation film. Electrical measurements reveal that the p-type characteristics of CNT-FETs were converted to n-type after deposition of SiN_x passivation films. Then, the n-type CNT-FETs with SiN_x passivation films were reconverted to p-type by annealing in N_2 atmosphere. As a consequence, the complementary voltage inverters comprising the p-type and n-type CNT-FETs with SiN_x passivation film were demonstrated on the same SiO_2 substrate by conventional photolithography and lift-off techniques. Moreover, static transfer and dynamic characteristics in the CNT-FET-based inverters were investigated, indicating that the gain of approximately three was achieved and that the device was switched properly at frequencies up to 100 Hz. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Carbon nanotube / Field-Effect Transistor / CMOS inverter / Cat-CVD |
Paper # | ED2009-206,SDM2009-203 |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 2010/2/15(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | CMOS inverter based on carbon nanotube field-effect transistors with SiNx passivation films |
Sub Title (in English) | |
Keyword(1) | Carbon nanotube |
Keyword(2) | Field-Effect Transistor |
Keyword(3) | CMOS inverter |
Keyword(4) | Cat-CVD |
1st Author's Name | Takaomi KISHIMOTO |
1st Author's Affiliation | The institute of scientific and industrial research, Osaka University() |
2nd Author's Name | Yasuhide OHNO |
2nd Author's Affiliation | The institute of scientific and industrial research, Osaka University |
3rd Author's Name | Kenzo MAEHASHI |
3rd Author's Affiliation | The institute of scientific and industrial research, Osaka University |
4th Author's Name | Koichi INOUE |
4th Author's Affiliation | The institute of scientific and industrial research, Osaka University |
5th Author's Name | Kazuhiko MATSUMOTO |
5th Author's Affiliation | The institute of scientific and industrial research, Osaka University |
Date | 2010-02-23 |
Paper # | ED2009-206,SDM2009-203 |
Volume (vol) | vol.109 |
Number (no) | 422 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |