Presentation 2010-02-23
CMOS inverter based on carbon nanotube field-effect transistors with SiNx passivation films
Takaomi KISHIMOTO, Yasuhide OHNO, Kenzo MAEHASHI, Koichi INOUE, Kazuhiko MATSUMOTO,
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Abstract(in English) We have demonstrated logic gates based on complementary carbon nanotube field-effect transistors(CNT-FETs)with SiN_x passivation films deposited by catalytic chemical vapor deposition. Carrier types in CNT-FETs were controlled by forming SiN_x passivation film. Electrical measurements reveal that the p-type characteristics of CNT-FETs were converted to n-type after deposition of SiN_x passivation films. Then, the n-type CNT-FETs with SiN_x passivation films were reconverted to p-type by annealing in N_2 atmosphere. As a consequence, the complementary voltage inverters comprising the p-type and n-type CNT-FETs with SiN_x passivation film were demonstrated on the same SiO_2 substrate by conventional photolithography and lift-off techniques. Moreover, static transfer and dynamic characteristics in the CNT-FET-based inverters were investigated, indicating that the gain of approximately three was achieved and that the device was switched properly at frequencies up to 100 Hz.
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Keyword(in English) Carbon nanotube / Field-Effect Transistor / CMOS inverter / Cat-CVD
Paper # ED2009-206,SDM2009-203
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Committee ED
Conference Date 2010/2/15(1days)
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Language JPN
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Title (in English) CMOS inverter based on carbon nanotube field-effect transistors with SiNx passivation films
Sub Title (in English)
Keyword(1) Carbon nanotube
Keyword(2) Field-Effect Transistor
Keyword(3) CMOS inverter
Keyword(4) Cat-CVD
1st Author's Name Takaomi KISHIMOTO
1st Author's Affiliation The institute of scientific and industrial research, Osaka University()
2nd Author's Name Yasuhide OHNO
2nd Author's Affiliation The institute of scientific and industrial research, Osaka University
3rd Author's Name Kenzo MAEHASHI
3rd Author's Affiliation The institute of scientific and industrial research, Osaka University
4th Author's Name Koichi INOUE
4th Author's Affiliation The institute of scientific and industrial research, Osaka University
5th Author's Name Kazuhiko MATSUMOTO
5th Author's Affiliation The institute of scientific and industrial research, Osaka University
Date 2010-02-23
Paper # ED2009-206,SDM2009-203
Volume (vol) vol.109
Number (no) 422
Page pp.pp.-
#Pages 5
Date of Issue