Presentation 2010-01-15
An X-band GaN HEMT T/R Switch with 50% Bandwidth
Masatake HANGAI, Yukinobu TARUI, Yoshitaka KAMO, Morishige Hieda,
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Abstract(in English) An X-band high-power T/R switch with bandwidth extension circuit has been developed. The proposed circuit is based on series/shunt-shunt configuration, and realizes broadband performance at Rx-mode while keeping high-power handling capability and low insertion loss. To verify this methodology, we have fabricated an T/R switch using GaN HEMT. The switch circuit has achieved the power handling capability of 20W, the insertion loss of 1.2dB at Tx-mode, and the insertion loss of 1.7dB at Rx-mode in the 50% bandwidth of X-band.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) T/R switch / High-power handling capability / bandwidth extension circuit / GaN HEMT
Paper # ED2009-194,MW2009-177
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Committee ED
Conference Date 2010/1/6(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) An X-band GaN HEMT T/R Switch with 50% Bandwidth
Sub Title (in English)
Keyword(1) T/R switch
Keyword(2) High-power handling capability
Keyword(3) bandwidth extension circuit
Keyword(4) GaN HEMT
1st Author's Name Masatake HANGAI
1st Author's Affiliation Mitsubishi Electric Corporation()
2nd Author's Name Yukinobu TARUI
2nd Author's Affiliation Mitsubishi Electric Corporation
3rd Author's Name Yoshitaka KAMO
3rd Author's Affiliation Mitsubishi Electric Corporation
4th Author's Name Morishige Hieda
4th Author's Affiliation Mitsubishi Electric Corporation
Date 2010-01-15
Paper # ED2009-194,MW2009-177
Volume (vol) vol.109
Number (no) 360
Page pp.pp.-
#Pages 5
Date of Issue