Presentation | 2010-01-15 An X-band GaN HEMT T/R Switch with 50% Bandwidth Masatake HANGAI, Yukinobu TARUI, Yoshitaka KAMO, Morishige Hieda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | An X-band high-power T/R switch with bandwidth extension circuit has been developed. The proposed circuit is based on series/shunt-shunt configuration, and realizes broadband performance at Rx-mode while keeping high-power handling capability and low insertion loss. To verify this methodology, we have fabricated an T/R switch using GaN HEMT. The switch circuit has achieved the power handling capability of 20W, the insertion loss of 1.2dB at Tx-mode, and the insertion loss of 1.7dB at Rx-mode in the 50% bandwidth of X-band. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | T/R switch / High-power handling capability / bandwidth extension circuit / GaN HEMT |
Paper # | ED2009-194,MW2009-177 |
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Conference Information | |
Committee | ED |
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Conference Date | 2010/1/6(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | An X-band GaN HEMT T/R Switch with 50% Bandwidth |
Sub Title (in English) | |
Keyword(1) | T/R switch |
Keyword(2) | High-power handling capability |
Keyword(3) | bandwidth extension circuit |
Keyword(4) | GaN HEMT |
1st Author's Name | Masatake HANGAI |
1st Author's Affiliation | Mitsubishi Electric Corporation() |
2nd Author's Name | Yukinobu TARUI |
2nd Author's Affiliation | Mitsubishi Electric Corporation |
3rd Author's Name | Yoshitaka KAMO |
3rd Author's Affiliation | Mitsubishi Electric Corporation |
4th Author's Name | Morishige Hieda |
4th Author's Affiliation | Mitsubishi Electric Corporation |
Date | 2010-01-15 |
Paper # | ED2009-194,MW2009-177 |
Volume (vol) | vol.109 |
Number (no) | 360 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |