Presentation	2010-01-15 A Low-Voltage, Broadband Operation HBT Power Amplifier for CDMA Applications Kazuya YAMAMOTO, Atsushi OKAMURA, Takayuki MATSUZUKA, Yutaka YOSHII, Satoshi SUZUKI, Masatoshi NAKAYAMA, Teruyuki SHIMURA, Naohito YOSHIDA,
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Abstract(in English)	This paper describes circuit design and measurement results of an HBT MMIC power amplifier module(PA)operating with a 2.5-V low reference voltage(Vref)and 2.8-V low collector supply voltages(V_). While covering 824-925-MHz broadband CDMA operation at 2.8-V V_, the PA allows a 1.1-V low V_ and 18-dBm P_ operation. This is realized by an on-chip step quiescent current selector monitoring collector voltage. Measurement results under the 2.8/1.1-V V_ and 2.5-V Vref bias conditions show that the PA meets J-/W-CDMA power and distortion specifications sufficiently over a wide temperature range from -20 to 85°C while operating over a wideband from 824 to 925 MHz. For J-CDMA(IS-95B)modulation, the PA can deliver a 28-dBm P_, a 36% PAE, and a -50-dBc ACPR, while a 29-dBm P_, a 38% PAE, and a -40-dBc ACLR are achieved for W-CDMA(R99)modulation. In addition, the PA is capable of delivering a 18-dBm P_ and more than 23% PAE under 824-925-MHz and 1.1-V J-CDMA modulation test conditions. To the best of author's knowledge, this is the first report on a broadband CDMA PA operating with low Vref and low V_.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Power amplifiers / heterojunction bipolar transistors(HBTs) / MMIC / CDMA
Paper #	ED2009-193,MW2009-176
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Committee	ED
Conference Date	2010/1/6(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	A Low-Voltage, Broadband Operation HBT Power Amplifier for CDMA Applications
Sub Title (in English)
Keyword(1)	Power amplifiers
Keyword(2)	heterojunction bipolar transistors(HBTs)
Keyword(3)	MMIC
Keyword(4)	CDMA
1st Author's Name	Kazuya YAMAMOTO
1st Author's Affiliation	High Frequency and Optical Device Works, Mitsubishi Electric Corporation()
2nd Author's Name	Atsushi OKAMURA
2nd Author's Affiliation	High Frequency and Optical Device Works, Mitsubishi Electric Corporation
3rd Author's Name	Takayuki MATSUZUKA
3rd Author's Affiliation	High Frequency and Optical Device Works, Mitsubishi Electric Corporation
4th Author's Name	Yutaka YOSHII
4th Author's Affiliation	High Frequency and Optical Device Works, Mitsubishi Electric Corporation
5th Author's Name	Satoshi SUZUKI
5th Author's Affiliation	High Frequency and Optical Device Works, Mitsubishi Electric Corporation
6th Author's Name	Masatoshi NAKAYAMA
6th Author's Affiliation	High Frequency and Optical Device Works, Mitsubishi Electric Corporation
7th Author's Name	Teruyuki SHIMURA
7th Author's Affiliation	High Frequency and Optical Device Works, Mitsubishi Electric Corporation
8th Author's Name	Naohito YOSHIDA
8th Author's Affiliation	High Frequency and Optical Device Works, Mitsubishi Electric Corporation
Date	2010-01-15
Paper #	ED2009-193,MW2009-176
Volume (vol)	vol.109
Number (no)	360
Page	pp.pp.-
#Pages	6
Date of Issue