Presentation 2010/4/29
Reduction in Facet Temperature of AlGaInAs Edge-Emitting Lasers
Hiroyuki ICHIKAWA, Nobuyuki IKOMA,
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Abstract(in English) AlGaInAs edge-emitting lasers have been expected for element devices for optical communication systems. However, increase in thermal resistance due to short cavity and increase in facet temperature due to increase in optical absorption are predicted. Since temperature rise leads low reliability, we tried to decrease facet temperature of 1.31-μm AlGaInAs edge-emitting lasers. Three approaches were applied: decrease in current injection at the facet, decrease in optical absorption at the facet, and increase in radiation of heat at the facet. The reductions of facet temperature were evaluated 5%, approximately 30%, and 16%, respectively. From these results, we confirmed that decrease in optical absorption is an effective method for reducing facet temperature.
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Paper # CPM2010-4,R2010-4,OPE2010-4
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Committee CPM
Conference Date 2010/4/29(1days)
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Language JPN
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Title (in English) Reduction in Facet Temperature of AlGaInAs Edge-Emitting Lasers
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1st Author's Name Hiroyuki ICHIKAWA
1st Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.:Analysis Technology Reserch Center, Sumitomo Electric Industries, Ltd.()
2nd Author's Name Nobuyuki IKOMA
2nd Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
Date 2010/4/29
Paper # CPM2010-4,R2010-4,OPE2010-4
Volume (vol) vol.110
Number (no) 6
Page pp.pp.-
#Pages 6
Date of Issue