Presentation | 2010/4/29 Reduction in Facet Temperature of AlGaInAs Edge-Emitting Lasers Hiroyuki ICHIKAWA, Nobuyuki IKOMA, |
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Abstract(in English) | AlGaInAs edge-emitting lasers have been expected for element devices for optical communication systems. However, increase in thermal resistance due to short cavity and increase in facet temperature due to increase in optical absorption are predicted. Since temperature rise leads low reliability, we tried to decrease facet temperature of 1.31-μm AlGaInAs edge-emitting lasers. Three approaches were applied: decrease in current injection at the facet, decrease in optical absorption at the facet, and increase in radiation of heat at the facet. The reductions of facet temperature were evaluated 5%, approximately 30%, and 16%, respectively. From these results, we confirmed that decrease in optical absorption is an effective method for reducing facet temperature. |
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Paper # | CPM2010-4,R2010-4,OPE2010-4 |
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Committee | CPM |
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Conference Date | 2010/4/29(1days) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
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Title (in English) | Reduction in Facet Temperature of AlGaInAs Edge-Emitting Lasers |
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1st Author's Name | Hiroyuki ICHIKAWA |
1st Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.:Analysis Technology Reserch Center, Sumitomo Electric Industries, Ltd.() |
2nd Author's Name | Nobuyuki IKOMA |
2nd Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd. |
Date | 2010/4/29 |
Paper # | CPM2010-4,R2010-4,OPE2010-4 |
Volume (vol) | vol.110 |
Number (no) | 6 |
Page | pp.pp.- |
#Pages | 6 |
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