| Presentation | 2010/5/6 Charging phenomena of a single electron in P-doped Si SOI-MOSFETs Earfan Hamid, Juli Cha Tarido, Sakito Miki, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single electron charging memory effect which caused by a single dopant has been observed in our experiment. The working principles of the device are based on sequential tunneling of single electrons between the phosphorus dopants from source to drain based on orthodox theory. With higher channel doping, dopant atoms may work also as traps for single electrons. In order to characterize this phenomenon theoretically, we studied by Monte Carlo simulations a simple circuit consisting of two QDs in parallel and observed that charging effect can be reproduced even with such a simple circuit. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI MOSFETs / Quantum Dot / Dopant Trap / Monte Carlo simulation |
| Paper # | CPM2010-11,ED2010-21,SDM2010-21 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2010/5/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Charging phenomena of a single electron in P-doped Si SOI-MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | SOI MOSFETs |
| Keyword(2) | Quantum Dot |
| Keyword(3) | Dopant Trap |
| Keyword(4) | Monte Carlo simulation |
| 1st Author's Name | Earfan Hamid |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Juli Cha Tarido |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Sakito Miki |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Daniel Moraru |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Takeshi Mizuno |
| 5th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | Michiharu Tabe |
| 6th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2010/5/6 |
| Paper # | CPM2010-11,ED2010-21,SDM2010-21 |
| Volume (vol) | vol.110 |
| Number (no) | 30 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |