| Presentation | 2010/5/6 Measurement of Electron Traps in n-GaN on Si(111) Substrates by Deep-Level Transient Spectroscopy Arata WATANABE, Takashi EGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN and its alloys have found broad application for the visible to ultraviolet optoelectronics, high frequency, high power, and high temperature electron devices. Over a decade, the growth of these nitrides on Si substrate has become a subject of great interest, because of the numerous advantages like significantly lower cost, good thermal conductivity, and availability in large diameter. However, there are some difficulties in the growth of GaN on Si, especially deep traps of GaN due to lattice mismatch between them. In this paper, we report electron traps in n-GaN grown on Si substrates by MOCVD, and analyzed the crystal quality, electrical properties and investigated the deep traps by DLTS measurement. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si substrate / GaN / DLTS / deep level / MOCVD |
| Paper # | CPM2010-7,ED2010-17,SDM2010-17 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2010/5/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Measurement of Electron Traps in n-GaN on Si(111) Substrates by Deep-Level Transient Spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | Si substrate |
| Keyword(2) | GaN |
| Keyword(3) | DLTS |
| Keyword(4) | deep level |
| Keyword(5) | MOCVD |
| 1st Author's Name | Arata WATANABE |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Takashi EGAWA |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2010/5/6 |
| Paper # | CPM2010-7,ED2010-17,SDM2010-17 |
| Volume (vol) | vol.110 |
| Number (no) | 30 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |