Presentation 2010-01-29
Numerical Analysisi of Dynamic Mechanism and Device Characteristics of Tunnel Injection SOA
Mikio Sorimachi, Yasutake Higa, Shinya Matsuzaki, Tomoyuki Miyamoto,
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Abstract(in English) Semiconductor optical amplifier with a tunnel injection (TI-SOA) has carrier reservoir provides the carrier reduced by stimulated emission for the active region. And TI-SOA can control the current injection by designing the quantum-well based structure. Both effects enable the speed-up of SOA. In this paper we provide the influence of a positonal and energy distribution of the carrier and injection region structure on the device characteristics by the numerical analysis. The results indicate that TI-SOA has the potential of high-speed operation compared with conventional quantum well SOA (QW-SOA).
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Keyword(in English) Semiconductor optical amplifier / Tunnel injection / High speed operation
Paper # PN2009-64,OPE2009-202,LQE2009-184
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Conference Date 2010/1/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Numerical Analysisi of Dynamic Mechanism and Device Characteristics of Tunnel Injection SOA
Sub Title (in English)
Keyword(1) Semiconductor optical amplifier
Keyword(2) Tunnel injection
Keyword(3) High speed operation
1st Author's Name Mikio Sorimachi
1st Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology()
2nd Author's Name Yasutake Higa
2nd Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology
3rd Author's Name Shinya Matsuzaki
3rd Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology
4th Author's Name Tomoyuki Miyamoto
4th Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology
Date 2010-01-29
Paper # PN2009-64,OPE2009-202,LQE2009-184
Volume (vol) vol.109
Number (no) 401
Page pp.pp.-
#Pages 6
Date of Issue